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نمایش تعداد 1-10 از 16

Analytical modeling of the two-dimensional potential distribution and threshold voltage of the SOI four-gate transistor

نوع: Journal Paper

نویسنده : Akarvardar, K.; Cristoloveanu, S.; Gentil, P.

سال: 2006

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Mobility Investigation by Geometrical Magnetoresistance in Fully Depleted MOSFETs and FinFETs

نوع: Journal Paper

نویسنده : Sung-Jae Chang; Bawedin, M.; Cristoloveanu, S.

ناشر: IEEE

سال: 2014

Mobility Enhancement by Back-Gate Biasing in Ultrathin SOI MOSFETs With Thin BOX

نوع: Journal Paper

نویسنده : Ohata, A.; Bae, Y.; Fenouillet-Beranger, C.; Cristoloveanu, S.

ناشر: IEEE

سال: 2012

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A2RAM: Low-power 1T-DRAM memory cells compatible with planar and 3D SOI substrates

نوع: Conference Paper

نویسنده : Gamiz, F.; Rodriguez, N.; Marquez, C.; Navarro, C.; Cristoloveanu, S.

ناشر: IEEE

سال: 2014

Dual Ground Plane EDMOS in ultrathin FDSOI for 5V energy management applications

نوع: Conference Paper

نویسنده : Litty, A.; Ortolland, S.; Golanski, D.; Cristoloveanu, S.

ناشر: IEEE

سال: 2014

A tunneling field effect transistor model combining interband tunneling with channel transport

نوع: Journal Paper

نویسنده : Wan, J.; Le Royer, C.; Zaslavsky, A.; Cristoloveanu, S.

سال: 2011

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Overestimation of Short-Channel Effects Due to Intergate Coupling in Advanced FD-SOI MOSFETs

نوع: Journal Paper

نویسنده : Navarro, C.; Bawedin, M.; Andrieu, F.; Cristoloveanu, S.

ناشر: IEEE

سال: 2014

A Two-Dimensional Model for Interface Coupling in Triple-Gate Transistors

نوع: Journal Paper

نویسنده : Akarvardar, K.; Mercha, A.; Cristoloveanu, S.; Gentil, P.; Simoen, E.; Subramanian, V.; Claeys, C.

ناشر: IEEE

سال: 2007

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Sub-band modulated electronic transport in planar fully-depleted silicon-on-insulator MOSFETs

نوع: Conference Paper

نویسنده : Umana-Membreno, G.A.; Chang, S.-J.; Bawedin, M.; Antoszewski, J.; Cristoloveanu, S.; Faraone, L.

ناشر: IEEE

سال: 2014

Mobility spectrum analysis of magnetoresistance in fully-depleted MOSFETs

نوع: Conference Paper

نویسنده : Umana-Membreno, G.A.; Chang, S.-J.; Bawedin, M.; Antoszewski, J.; Cristoloveanu, S.; Faraone, L.

ناشر: IEEE

سال: 2014

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Analytical modeling of the two-dimensional potential distribution and threshold voltage of the SOI four-gate transistor

Mobility Investigation by Geometrical Magnetoresistance in Fully Depleted MOSFETs and FinFETs

Mobility Enhancement by Back-Gate Biasing in Ultrathin SOI MOSFETs With Thin BOX

A2RAM: Low-power 1T-DRAM memory cells compatible with planar and 3D SOI substrates

Dual Ground Plane EDMOS in ultrathin FDSOI for 5V energy management applications

A tunneling field effect transistor model combining interband tunneling with channel transport

Overestimation of Short-Channel Effects Due to Intergate Coupling in Advanced FD-SOI MOSFETs

A Two-Dimensional Model for Interface Coupling in Triple-Gate Transistors

Sub-band modulated electronic transport in planar fully-depleted silicon-on-insulator MOSFETs

Mobility spectrum analysis of magnetoresistance in fully-depleted MOSFETs

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Analytical modeling of the two-dimensional potential distribution and threshold voltage of the SOI four-gate transistor

Mobility Investigation by Geometrical Magnetoresistance in Fully Depleted MOSFETs and FinFETs

Mobility Enhancement by Back-Gate Biasing in Ultrathin SOI MOSFETs With Thin BOX

A2RAM: Low-power 1T-DRAM memory cells compatible with planar and 3D SOI substrates

Dual Ground Plane EDMOS in ultrathin FDSOI for 5V energy management applications

A tunneling field effect transistor model combining interband tunneling with channel transport

Overestimation of Short-Channel Effects Due to Intergate Coupling in Advanced FD-SOI MOSFETs

A Two-Dimensional Model for Interface Coupling in Triple-Gate Transistors

Sub-band modulated electronic transport in planar fully-depleted silicon-on-insulator MOSFETs

Mobility spectrum analysis of magnetoresistance in fully-depleted MOSFETs