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MOSFET modeling & BSIM3 user’s guide

نوع: Ebook

نویسنده : Yuhua Cheng; Chenming Hu

ناشر: Kluwer Academic

سال: 2002

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MOSFET Modeling and BSIM3 User's Guide

نوع: Ebook

نویسنده : Yuhua Cheng; Chenming Hu

ناشر: Springer

سال: 1999

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Modeling CMOS tunneling currents through ultrathin gate oxide due to conduction- and valence-band electron and hole tunneling

نوع: Journal Paper

نویسنده : Wen-Chin Lee; Chenming Hu

سال: 2001

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Hole injection SiO2 breakdown model for very low voltage lifetime extrapolation

نوع: Journal Paper

نویسنده : Schuegraf, K.F.; Chenming Hu

سال: 1994

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Impact of channel doping on the device and NBTI performance in FinFETs for low power applications

نوع: Conference Paper

نویسنده : Sachid, A.B. , Chenming Hu

ناشر: IEEE

سال: 2014

The operation of power MOSFET in reverse mode

نوع: Journal Paper

نویسنده : Min-hwa Chi; Chenming Hu

سال: 1983

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Body-bias effect in SOI FinFET for low-power applications: Gate length dependence

نوع: Conference Paper

نویسنده : Sachid, A.B. , Khandelwal, S. , Chenming Hu

ناشر: IEEE

سال: 2014

MOSFET Gate Oxide Reliability: Anode Hole Injection Model and its Applications

نوع: Journal Paper

نویسنده : Yee-Chia Yeo; Qiang Lu; Chenming Hu

سال: 2002

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A robust and physical BSIM3 non-quasi-static transient and AC small-signal model for circuit simulation

نوع: Journal Paper

نویسنده : Mansun Chan; Hui, K.Y.; Chenming Hu; Ko, P.K.

سال: 1998

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Ferroelectric negative capacitance MOSFET: Capacitance tuning

نوع: Journal Paper

نویسنده : Asif I. Khan; Chun W. Yeung; Chenming Hu; Sayeef Salahuddin

سال: 2011

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MOSFET modeling & BSIM3 user’s guide

MOSFET Modeling and BSIM3 User's Guide

Modeling CMOS tunneling currents through ultrathin gate oxide due to conduction- and valence-band electron and hole tunneling

Hole injection SiO2 breakdown model for very low voltage lifetime extrapolation

Impact of channel doping on the device and NBTI performance in FinFETs for low power applications

The operation of power MOSFET in reverse mode

Body-bias effect in SOI FinFET for low-power applications: Gate length dependence

MOSFET Gate Oxide Reliability: Anode Hole Injection Model and its Applications

A robust and physical BSIM3 non-quasi-static transient and AC small-signal model for circuit simulation

Ferroelectric negative capacitance MOSFET: Capacitance tuning

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MOSFET modeling & BSIM3 user’s guide

MOSFET Modeling and BSIM3 User's Guide

Modeling CMOS tunneling currents through ultrathin gate oxide due to conduction- and valence-band electron and hole tunneling

Hole injection SiO2 breakdown model for very low voltage lifetime extrapolation

Impact of channel doping on the device and NBTI performance in FinFETs for low power applications

The operation of power MOSFET in reverse mode

Body-bias effect in SOI FinFET for low-power applications: Gate length dependence

MOSFET Gate Oxide Reliability: Anode Hole Injection Model and its Applications

A robust and physical BSIM3 non-quasi-static transient and AC small-signal model for circuit simulation

Ferroelectric negative capacitance MOSFET: Capacitance tuning