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نمایش تعداد 1-7 از 7

Modeling Illumination Effects on n- and p-Type InGaAs MOS at Room and Low Temperatures

نوع: Journal Paper

نویسنده : Han-Ping Chen; Veksler, Dekel; Bersuker, Gennadi; Yuan Taur

ناشر: IEEE

سال: 2014

AC Variability and Endurance Measurement Technique for Resistive Switching Memories

نوع: Journal Paper

نویسنده : Deora, S.; Bersuker, Gennadi; Matthews, K.; Gilmer, D.C.; Kirsch, P.D.

ناشر: IEEE

سال: 2014

A Charge-Trapping Model for the Fast Component of Positive Bias Temperature Instability (PBTI) in High-<inline-formula> <img src="/images/tex/21688.gif" alt="\\kappa "> </inline-formula> Gate-Stacks

نوع: Journal Paper

نویسنده : Vandelli, Luca; Larcher, Luca; Veksler, Dekel; Padovani, A.; Bersuker, Gennadi; Matthews, K.

ناشر: IEEE

سال: 2014

A Compact Model of Program Window in HfO<sub><italic>x</italic></sub> RRAM Devices for Conductive Filament Characteristics Analysis

نوع: Journal Paper

نویسنده : Larcher, Luca; Puglisi, Francesco; Pavan, Paolo; Padovani, A.; Vandelli, Luca; Bersuker, Gennadi

ناشر: IEEE

سال: 2014

Device-Level Experimental Observations of NBTI-Induced Random Timing Jitter

نوع: Journal Paper

نویسنده : Jiao, G.F.; Lu, J.W.; Campbell, J.P.; Ryan, J.T.; Cheung, K.P.; Young, Chadwin D.; Bersuker, Gennadi

ناشر: IEEE

سال: 2014

PBTI-Induced Random Timing Jitter in Circuit-Speed Random Logic

نوع: Journal Paper

نویسنده : Jiwu Lu; Jiao, Guangfan; Vaz, C.; Campbell, J.P.; Ryan, J.T.; Cheung, K.P.; Bersuker, Gennadi; Young, Cliff

ناشر: IEEE

سال: 2014

Bias Dependence of Total Ionizing Dose Effects in SiGe-<formula formulatype="inline"> <img src="/images/tex/21594.gif" alt="{{\\rm SiO}_2}/{{\\rm HfO}_2} p"> </formula>MOS FinFETs

نوع: Journal Paper

نویسنده : Guo Xing Duan; Cher Xuan Zhang; En Xia Zhang; Hachtel, Jordan; Fleetwood, D.M.; Schrimpf, R.D.; Reed, R.A.; Alles, Michael L.; Pantelides, Sokrates T.; Bersuker, Gennadi; Young, Chadwin D.

ناشر: IEEE

سال: 2014

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Modeling Illumination Effects on n- and p-Type InGaAs MOS at Room and Low Temperatures

AC Variability and Endurance Measurement Technique for Resistive Switching Memories

A Charge-Trapping Model for the Fast Component of Positive Bias Temperature Instability (PBTI) in High-<inline-formula> <img src="/images/tex/21688.gif" alt="\\kappa "> </inline-formula> Gate-Stacks

A Compact Model of Program Window in HfO<sub><italic>x</italic></sub> RRAM Devices for Conductive Filament Characteristics Analysis

Device-Level Experimental Observations of NBTI-Induced Random Timing Jitter

PBTI-Induced Random Timing Jitter in Circuit-Speed Random Logic

Bias Dependence of Total Ionizing Dose Effects in SiGe-<formula formulatype="inline"> <img src="/images/tex/21594.gif" alt="{{\\rm SiO}_2}/{{\\rm HfO}_2} p"> </formula>MOS FinFETs

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Modeling Illumination Effects on n- and p-Type InGaAs MOS at Room and Low Temperatures

AC Variability and Endurance Measurement Technique for Resistive Switching Memories

A Charge-Trapping Model for the Fast Component of Positive Bias Temperature Instability (PBTI) in High-<inline-formula> <img src="/images/tex/21688.gif" alt="\\kappa "> </inline-formula> Gate-Stacks

A Compact Model of Program Window in HfO<sub><italic>x</italic></sub> RRAM Devices for Conductive Filament Characteristics Analysis

Device-Level Experimental Observations of NBTI-Induced Random Timing Jitter

PBTI-Induced Random Timing Jitter in Circuit-Speed Random Logic

Bias Dependence of Total Ionizing Dose Effects in SiGe-<formula formulatype="inline"> <img src="/images/tex/21594.gif" alt="{{\\rm SiO}_2}/{{\\rm HfO}_2} p"> </formula>MOS FinFETs