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نمایش تعداد 1-6 از 6

Total Ionizing Dose Retention Capability of Conductive Bridging Random Access Memory

نوع: Journal Paper

نویسنده : Gonzalez-Velo, Y.; Barnaby, H.J.; Kozicki, M.N.; Gopalan, Chakravarthy; Holbert, Keith

ناشر: IEEE

سال: 2014

Total Ionizing Dose Tolerance of <formula formulatype="inline"> <img src="/images/tex/21424.gif" alt="{\\rm Ag} - {\\rm Ge}_{40}{\\rm S}_{60}"> </formula> based Programmable Metallization Cells

نوع: Journal Paper

نویسنده : Dandamudi, P.; Kozicki, M.N.; Barnaby, H.J.; Gonzalez-Velo, Y.; Holbert, K.E.

ناشر: IEEE

سال: 2014

Impedance Measurement and Characterization of Ag-Ge<sub>30</sub>Se<sub>70</sub>-Based Programmable Metallization Cells

نوع: Journal Paper

نویسنده : Mahalanabis, Debayan; Gonzalez-Velo, Y.; Barnaby, H.J.; Kozicki, M.N.; Dandamudi, P.; Vrudhula, Sarma

ناشر: IEEE

سال: 2014

Investigation of Single Event Induced Soft Errors in Programmable Metallization Cell Memory

نوع: Journal Paper

نویسنده : Mahalanabis, Debayan; Barnaby, H.J.; Kozicki, M.N.; Bharadwaj, Vineeth; Rajabi, Saba

ناشر: IEEE

سال: 2014

Ionizing Radiation Effects on Nonvolatile Memory Properties of Programmable Metallization Cells

نوع: Journal Paper

نویسنده : Taggart, J.L.; Gonzalez-Velo, Y.; Mahalanabis, Debayan; Mahmud, A.; Barnaby, H.J.; Kozicki, M.N.; Holbert, K.E.; Mitkova, M.; Wolf, Klaus; Deionno, E.; White, A.L.

ناشر: IEEE

سال: 2014

Flexible Sensors Based on Radiation-Induced Diffusion of Ag in Chalcogenide Glass

نوع: Journal Paper

نویسنده : Dandamudi, P.; Mahmud, A.; Gonzalez-Velo, Y.; Kozicki, M.N.; Barnaby, H.J.; Roos, B.; Alford, T.L.; Ailavajhala, M.; Mitkova, M.; Holbert, K.E.

ناشر: IEEE

سال: 2014

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Total Ionizing Dose Retention Capability of Conductive Bridging Random Access Memory

Total Ionizing Dose Tolerance of <formula formulatype="inline"> <img src="/images/tex/21424.gif" alt="{\\rm Ag} - {\\rm Ge}_{40}{\\rm S}_{60}"> </formula> based Programmable Metallization Cells

Impedance Measurement and Characterization of Ag-Ge<sub>30</sub>Se<sub>70</sub>-Based Programmable Metallization Cells

Investigation of Single Event Induced Soft Errors in Programmable Metallization Cell Memory

Ionizing Radiation Effects on Nonvolatile Memory Properties of Programmable Metallization Cells

Flexible Sensors Based on Radiation-Induced Diffusion of Ag in Chalcogenide Glass

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Total Ionizing Dose Retention Capability of Conductive Bridging Random Access Memory

Total Ionizing Dose Tolerance of <formula formulatype="inline"> <img src="/images/tex/21424.gif" alt="{\\rm Ag} - {\\rm Ge}_{40}{\\rm S}_{60}"> </formula> based Programmable Metallization Cells

Impedance Measurement and Characterization of Ag-Ge<sub>30</sub>Se<sub>70</sub>-Based Programmable Metallization Cells

Investigation of Single Event Induced Soft Errors in Programmable Metallization Cell Memory

Ionizing Radiation Effects on Nonvolatile Memory Properties of Programmable Metallization Cells

Flexible Sensors Based on Radiation-Induced Diffusion of Ag in Chalcogenide Glass