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نمایش تعداد 1-10 از 35

Electro-thermal analysis of non-rectangular FinFET and modeling of fin shape effect on thermal resistance

نوع: Journal Paper

نویسنده : Fa. Karimi; Ali A. Orouji

سال: 2017

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Nanoscale SiGe-on-insulator (SGOI) MOSFET with graded doping channel for improving leakage current and hot-carrier degradation

نوع: Journal Paper

نویسنده : Morteza Rahimian; Ali A. Orouji

سال: 2011

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Dual material insulator SOI-LDMOSFET: A novel device for self-heating effect improvement

نوع: Journal Paper

نویسنده : Ali A. Orouji; Morteza Rahimian

سال: 2011

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A novel technique at LDMOSs to improve the figure of merit

نوع: Journal Paper

نویسنده : Amin Pak; Ali A. Orouji

سال: 2016

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A new nanoscale fin field effect transistor with embedded intrinsic region for high temperature applications

نوع: Journal Paper

نویسنده : Fa. Karimi; Ali A. Orouji

سال: 2016

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A novel nanoscale fin field effect transistor by amended channel: Investigation and fundamental physics

نوع: Journal Paper

نویسنده : Fa. Karimi; Ali A. Orouji

سال: 2015

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Dual material gate oxide stack symmetric double gate MOSFET: Improving short channel effects of nanoscale double gate MOSFET

نوع: Conference Paper

نویسنده : Pedram Razavi; Ali A. Orouji

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A novel nanoscale MOSFET with modified buried layer for improving of AC performance and self-heating effect

نوع: Journal Paper

نویسنده : Morteza Rahimian; Ali A. Orouji

ناشر: Elsevier Science

سال: 2012

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A new nanoscale and high temperature field effect transistor: Bi level FinFET

نوع: Journal Paper

نویسنده : Mahsa Mehrad; Ali A. Orouji

ناشر: Elsevier Science

سال: 2011

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Leakage current reduction in nanoscale fully-depleted SOI MOSFETs with modified current mechanism

نوع: Journal Paper

نویسنده : Ali A. Orouji; Morteza Rahimian

ناشر: Elsevier Science

سال: 2012

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Electro-thermal analysis of non-rectangular FinFET and modeling of fin shape effect on thermal resistance

Nanoscale SiGe-on-insulator (SGOI) MOSFET with graded doping channel for improving leakage current and hot-carrier degradation

Dual material insulator SOI-LDMOSFET: A novel device for self-heating effect improvement

A novel technique at LDMOSs to improve the figure of merit

A new nanoscale fin field effect transistor with embedded intrinsic region for high temperature applications

A novel nanoscale fin field effect transistor by amended channel: Investigation and fundamental physics

Dual material gate oxide stack symmetric double gate MOSFET: Improving short channel effects of nanoscale double gate MOSFET

A novel nanoscale MOSFET with modified buried layer for improving of AC performance and self-heating effect

A new nanoscale and high temperature field effect transistor: Bi level FinFET

Leakage current reduction in nanoscale fully-depleted SOI MOSFETs with modified current mechanism

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Electro-thermal analysis of non-rectangular FinFET and modeling of fin shape effect on thermal resistance

Nanoscale SiGe-on-insulator (SGOI) MOSFET with graded doping channel for improving leakage current and hot-carrier degradation

Dual material insulator SOI-LDMOSFET: A novel device for self-heating effect improvement

A novel technique at LDMOSs to improve the figure of merit

A new nanoscale fin field effect transistor with embedded intrinsic region for high temperature applications

A novel nanoscale fin field effect transistor by amended channel: Investigation and fundamental physics

Dual material gate oxide stack symmetric double gate MOSFET: Improving short channel effects of nanoscale double gate MOSFET

A novel nanoscale MOSFET with modified buried layer for improving of AC performance and self-heating effect

A new nanoscale and high temperature field effect transistor: Bi level FinFET

Leakage current reduction in nanoscale fully-depleted SOI MOSFETs with modified current mechanism