Search

نمایش تعداد 1-10 از 20

Improved Modeling of Medium Voltage SiC MOSFET Within Wide Temperature Range

نوع: Journal Paper

نویسنده : Kai Sun; Hongfei Wu; Juejing Lu; Yan Xing; Lipei Huang

ناشر: IEEE

سال: 2014

A Comparative Performance Study of a 1200 V Si and SiC MOSFET Intrinsic Diode on an Induction Heating Inverter

نوع: Journal Paper

نویسنده : Jordan, Jose; Esteve, Vicente; Sanchis-Kilders, Esteban; Dede, Enrique J.; Maset, Enrique; Ejea, Juan B.; Ferreres, Agustin

ناشر: IEEE

سال: 2014

Datasheet Driven Silicon Carbide Power MOSFET Model

نوع: Journal Paper

نویسنده : Mudholkar, Mihir; Ahmed, Shehab; Ericson, M. Nance; Frank, S. Shane; Britton, Charles L.; Mantooth, Homer Alan

ناشر: IEEE

سال: 2014

Design and simulation of intelligent brake system based on MATLAB and ADAMS

نوع: Conference Paper

ناشر: IEEE

سال: 2014

Welcome messages

نوع: Conference Paper

ناشر: IEEE

سال: 2014

Solid-State Bipolar Marx Modulator Modeling

نوع: Journal Paper

نویسنده : Canacsinh, Hiren; Redondo, L.M.; Silva, Jorge F.; Schamiloglu, Edl

ناشر: IEEE

سال: 2014

A Discretized Proportional Base Driver for Silicon Carbide Bipolar Junction Transistors

نوع: Journal Paper

نویسنده : Tolstoy, Georg; Peftitsis, Dimosthenis; Rabkowski, Jacek; Palmer, Patrick R.; Nee, H.-P.

ناشر: IEEE

سال: 2014

A 1200-V, 60-A SiC MOSFET Multichip Phase-Leg Module for High-Temperature, High-Frequency Applications

نوع: Journal Paper

نویسنده : Zheng Chen; Yiying Yao; Boroyevich, Dushan; Ngo, Khai D. T.; Mattavelli, Paolo; Rajashekara, Kaushik

ناشر: IEEE

سال: 2014

kV-Class GaN-on-Si HEMTs Enabling 99% Efficiency Converter at 800 V and 100 kHz

نوع: Journal Paper

نویسنده : Wu, Y.-F.; Gritters, J.; Shen, L.; Smith, R.P.; Swenson, Brian

ناشر: IEEE

سال: 2014

High-Speed Resonant Gate Driver With Controlled Peak Gate Voltage for Silicon Carbide MOSFETs

نوع: Journal Paper

نویسنده : Anthony, Philip; McNeill, Neville; Holliday, Derrick

ناشر: IEEE

سال: 2014

Search

Improved Modeling of Medium Voltage SiC MOSFET Within Wide Temperature Range

A Comparative Performance Study of a 1200 V Si and SiC MOSFET Intrinsic Diode on an Induction Heating Inverter

Datasheet Driven Silicon Carbide Power MOSFET Model

Design and simulation of intelligent brake system based on MATLAB and ADAMS

Welcome messages

Solid-State Bipolar Marx Modulator Modeling

A Discretized Proportional Base Driver for Silicon Carbide Bipolar Junction Transistors

A 1200-V, 60-A SiC MOSFET Multichip Phase-Leg Module for High-Temperature, High-Frequency Applications

kV-Class GaN-on-Si HEMTs Enabling 99% Efficiency Converter at 800 V and 100 kHz

High-Speed Resonant Gate Driver With Controlled Peak Gate Voltage for Silicon Carbide MOSFETs

نویسنده

ناشر

سال

کلیدواژه

نوع

زبان

نوع محتوا

عنوان ناشر

Search

Filters

Improved Modeling of Medium Voltage SiC MOSFET Within Wide Temperature Range

A Comparative Performance Study of a 1200 V Si and SiC MOSFET Intrinsic Diode on an Induction Heating Inverter

Datasheet Driven Silicon Carbide Power MOSFET Model

Design and simulation of intelligent brake system based on MATLAB and ADAMS

Welcome messages

Solid-State Bipolar Marx Modulator Modeling

A Discretized Proportional Base Driver for Silicon Carbide Bipolar Junction Transistors

A 1200-V, 60-A SiC MOSFET Multichip Phase-Leg Module for High-Temperature, High-Frequency Applications

kV-Class GaN-on-Si HEMTs Enabling 99&#x0025; Efficiency Converter at 800&#x00A0;V and 100&#x00A0;kHz

High-Speed Resonant Gate Driver With Controlled Peak Gate Voltage for Silicon Carbide MOSFETs

kV-Class GaN-on-Si HEMTs Enabling 99% Efficiency Converter at 800 V and 100 kHz