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نمایش تعداد 1-7 از 7

Enhancement of Electrical Stability in Oxide Thin-Film Transistors Using Multilayer Channels Grown by Atomic Layer Deposition

نوع: Journal Paper

نویسنده : Cheol Hyoun Ahn; Myung Gu Yun; Sang Yeol Lee; Hyung Koun Cho

ناشر: IEEE

سال: 2014

Fluorinated InGaZnO Thin-Film Transistor With HfLaO Gate Dielectric

نوع: Journal Paper

نویسنده : Ling Xuan Qian; Lai, P.T.

ناشر: IEEE

سال: 2014

Laterally Coupled IZO-Based Transistors on Free-Standing Proton Conducting Chitosan Membranes

نوع: Journal Paper

نویسنده : Jin Zhang; Jiangnan Dai; Liqiang Zhu; Changqing Chen; Qing Wan

ناشر: IEEE

سال: 2014

Reduction of Negative Bias and Light Instability of a-IGZO TFTs by Dual-Gate Driving

نوع: Journal Paper

نویسنده : Sejin Hong; Suhui Lee; Mativenga, Mallory; Jin Jang

ناشر: IEEE

سال: 2014

Delayed current zeros in FPSO offshore units

نوع: Conference Paper

نویسنده : Hernandes, Leonardo; Marques, Fabiano Zemella; Vasconcellos, Alexandre S.

ناشر: IEEE

سال: 2014

Applications of multimodal physical (IoT), cyber and social data for reliable and actionable insights

نوع: Conference Paper

نویسنده : Sheth, A.; Anantharam, P.; Thirunarayan, K.

ناشر: IEEE

سال: 2014

High Mobility Solution-Processed Hafnium Indium Zinc Oxide TFT With an Al-Doped <inline-formula> <img src="/images/tex/21641.gif" alt="{\\rm ZrO}_{2}"> </inline-formula> Gate Dielectric

نوع: Journal Paper

نویسنده : Yana Gao; Xifeng Li; Longlong Chen; Jifeng Shi; Xiao Wei Sun; Jianhua Zhang

ناشر: IEEE

سال: 2014

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Enhancement of Electrical Stability in Oxide Thin-Film Transistors Using Multilayer Channels Grown by Atomic Layer Deposition

Fluorinated InGaZnO Thin-Film Transistor With HfLaO Gate Dielectric

Laterally Coupled IZO-Based Transistors on Free-Standing Proton Conducting Chitosan Membranes

Reduction of Negative Bias and Light Instability of a-IGZO TFTs by Dual-Gate Driving

Delayed current zeros in FPSO offshore units

Applications of multimodal physical (IoT), cyber and social data for reliable and actionable insights

High Mobility Solution-Processed Hafnium Indium Zinc Oxide TFT With an Al-Doped <inline-formula> <img src="/images/tex/21641.gif" alt="{\\rm ZrO}_{2}"> </inline-formula> Gate Dielectric

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Enhancement of Electrical Stability in Oxide Thin-Film Transistors Using Multilayer Channels Grown by Atomic Layer Deposition

Fluorinated InGaZnO Thin-Film Transistor With HfLaO Gate Dielectric

Laterally Coupled IZO-Based Transistors on Free-Standing Proton Conducting Chitosan Membranes

Reduction of Negative Bias and Light Instability of a-IGZO TFTs by Dual-Gate Driving

Delayed current zeros in FPSO offshore units

Applications of multimodal physical (IoT), cyber and social data for reliable and actionable insights

High Mobility Solution-Processed Hafnium Indium Zinc Oxide TFT With an Al-Doped <inline-formula> <img src="/images/tex/21641.gif" alt="{\\rm ZrO}_{2}"> </inline-formula> Gate Dielectric