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نمایش تعداد 1-10 از 31

E-shaped patch antenna coupled plasmonic FET for broadband THz detection in 130nm CMOS technology

نوع: Conference Paper

نویسنده : Nahar, Shamsun; Hella, Mona M.

ناشر: IEEE

سال: 2014

Improved Modeling of Medium Voltage SiC MOSFET Within Wide Temperature Range

نوع: Journal Paper

نویسنده : Kai Sun; Hongfei Wu; Juejing Lu; Yan Xing; Lipei Huang

ناشر: IEEE

سال: 2014

Miniature End-Capped Fiber Sensor for Refractive Index and Temperature Measurement

نوع: Journal Paper

نویسنده : Xuan-Yu Zhang; Yong-Sen Yu; Cong-Cong Zhu; Chao Chen; Rui Yang; Yang Xue; Qi-Dai Chen; Hong-Bo Sun

ناشر: IEEE

سال: 2014

Datasheet Driven Silicon Carbide Power MOSFET Model

نوع: Journal Paper

نویسنده : Mudholkar, Mihir; Ahmed, Shehab; Ericson, M. Nance; Frank, S. Shane; Britton, Charles L.; Mantooth, Homer Alan

ناشر: IEEE

سال: 2014

Modelling versions and simulations of the cryogenic air distillation column

نوع: Conference Paper

نویسنده : Cioloca, A. , Both, R.

ناشر: IEEE

سال: 2014

A path to 10% efficiency for tin sulfide devices

نوع: Conference Paper

نویسنده : Mangan, N.M.; Brandt, R.E.; Steinmann, V.; Jaramillo, R.; Li, J.V.; Poindexter, J.R.; Hartman, K.; Leizhi Sun; Gordon, R.G.; Buonassisi, T.

ناشر: IEEE

سال: 2014

Thermally robust CMOS-aware Ge MOSFETs with high mobility at high-carrier densities on a single orientation Ge substrate

نوع: Conference Paper

ناشر: IEEE

سال: 2014

Environmental IoT: Programming Cyber-Physical Clouds with High-Level System Specifications

نوع: Conference Paper

نویسنده : Filho, Roberto Vito Rodrigues; Porter, Barry; Blair, Gordon

ناشر: IEEE

سال: 2014

Simultaneous Measurement of Refractive Index and Temperature Based on Modal Interference

نوع: Journal Paper

نویسنده : Rui Xiong; Hongyun Meng; Qiqi Yao; Ben Huang; Yongmei Liu; Hongchao Xue; Chunhua Tan; Xuguang Huang

ناشر: IEEE

سال: 2014

Athermal silicon optical interposers with quantum dot lasers operating from 25 to 125°C

نوع: Journal Paper

نویسنده : Urino, Yutaka; Hatori, Nobuaki; Akagawa, Takeshi; Shimizu, Tsuyoshi; Okano, Makoto; Ishizaka, Masashige; Yamamoto, Takayuki; Okayama, Hideaki; Onawa, Yosuke; Takahashi, Hiroki; Shimura, Daisuke; Yaegashi, Hiroki; Nishi, Hidetaka; Fukuda, Hiroshi; Yamada, Koji; Miura, Masaki; Fujikata, J.; Akiyama, Soramichi; Baba, Toshihiko; Usuki, Tatsuya; Noguchi, Y.; Noguchi, M.; Imai, Masayoshi; Hirayama, Naoki; Saitou, Shigeru; Yamagishi, M.; Takahashi, Masaharu; Saito, Emiko; Ok

ناشر: IET

سال: 2014

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E-shaped patch antenna coupled plasmonic FET for broadband THz detection in 130nm CMOS technology

Improved Modeling of Medium Voltage SiC MOSFET Within Wide Temperature Range

Miniature End-Capped Fiber Sensor for Refractive Index and Temperature Measurement

Datasheet Driven Silicon Carbide Power MOSFET Model

Modelling versions and simulations of the cryogenic air distillation column

A path to 10% efficiency for tin sulfide devices

Thermally robust CMOS-aware Ge MOSFETs with high mobility at high-carrier densities on a single orientation Ge substrate

Environmental IoT: Programming Cyber-Physical Clouds with High-Level System Specifications

Simultaneous Measurement of Refractive Index and Temperature Based on Modal Interference

Athermal silicon optical interposers with quantum dot lasers operating from 25 to 125°C

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E-shaped patch antenna coupled plasmonic FET for broadband THz detection in 130nm CMOS technology

Improved Modeling of Medium Voltage SiC MOSFET Within Wide Temperature Range

Miniature End-Capped Fiber Sensor for Refractive Index and Temperature Measurement

Datasheet Driven Silicon Carbide Power MOSFET Model

Modelling versions and simulations of the cryogenic air distillation column

A path to 10% efficiency for tin sulfide devices

Thermally robust CMOS-aware Ge MOSFETs with high mobility at high-carrier densities on a single orientation Ge substrate

Environmental IoT: Programming Cyber-Physical Clouds with High-Level System Specifications

Simultaneous Measurement of Refractive Index and Temperature Based on Modal Interference

Athermal silicon optical interposers with quantum dot lasers operating from 25 to 125&#x000B0;C

Athermal silicon optical interposers with quantum dot lasers operating from 25 to 125°C