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نمایش تعداد 1-5 از 5

Reduction of Negative Bias and Light Instability of a-IGZO TFTs by Dual-Gate Driving

نوع: Journal Paper

نویسنده : Sejin Hong; Suhui Lee; Mativenga, Mallory; Jin Jang

ناشر: IEEE

سال: 2014

Oxygenated CdS window layers for thin film CdTe photovoltaics by pulsed DC magnetron sputtering

نوع: Conference Paper

نویسنده : Kaminski, P.M.; Lisco, F.; Abbas, A.; Bowers, J.W.; Claudio, G.; Walls, J.M.

ناشر: IEEE

سال: 2014

Reduction of Positive-Bias-Stress Effects in Bulk-Accumulation Amorphous-InGaZnO TFTs

نوع: Journal Paper

نویسنده : Seonghyun Jin; Tae-Woong Kim; Young-Gug Seol; Mativenga, Mallory; Jin Jang

ناشر: IEEE

سال: 2014

Total-Ionizing-Dose Induced Coupling Effect in the 130-nm PDSOI I/O nMOSFETs

نوع: Journal Paper

نویسنده : Chao Peng; Zhiyuan Hu; Bingxu Ning; Huixiang Huang; Zhengxuan Zhang; Dawei Bi; Yunfei En; Shichang Zou

ناشر: IEEE

سال: 2014

Bias Dependence of Total Ionizing Dose Effects in SiGe-<formula formulatype="inline"> <img src="/images/tex/21594.gif" alt="{{\\rm SiO}_2}/{{\\rm HfO}_2} p"> </formula>MOS FinFETs

نوع: Journal Paper

نویسنده : Guo Xing Duan; Cher Xuan Zhang; En Xia Zhang; Hachtel, Jordan; Fleetwood, D.M.; Schrimpf, R.D.; Reed, R.A.; Alles, Michael L.; Pantelides, Sokrates T.; Bersuker, Gennadi; Young, Chadwin D.

ناشر: IEEE

سال: 2014

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Reduction of Negative Bias and Light Instability of a-IGZO TFTs by Dual-Gate Driving

Oxygenated CdS window layers for thin film CdTe photovoltaics by pulsed DC magnetron sputtering

Reduction of Positive-Bias-Stress Effects in Bulk-Accumulation Amorphous-InGaZnO TFTs

Total-Ionizing-Dose Induced Coupling Effect in the 130-nm PDSOI I/O nMOSFETs

Bias Dependence of Total Ionizing Dose Effects in SiGe-<formula formulatype="inline"> <img src="/images/tex/21594.gif" alt="{{\\rm SiO}_2}/{{\\rm HfO}_2} p"> </formula>MOS FinFETs

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Reduction of Negative Bias and Light Instability of a-IGZO TFTs by Dual-Gate Driving

Oxygenated CdS window layers for thin film CdTe photovoltaics by pulsed DC magnetron sputtering

Reduction of Positive-Bias-Stress Effects in Bulk-Accumulation Amorphous-InGaZnO TFTs

Total-Ionizing-Dose Induced Coupling Effect in the 130-nm PDSOI I/O nMOSFETs

Bias Dependence of Total Ionizing Dose Effects in SiGe-<formula formulatype="inline"> <img src="/images/tex/21594.gif" alt="{{\\rm SiO}_2}/{{\\rm HfO}_2} p"> </formula>MOS FinFETs