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نمایش تعداد 1-10 از 14

Message from the Workshop Organizers - IWSC 2014

نوع: Conference Paper

ناشر: IEEE

سال: 2014

GaN-Based LEDs With Hot/Cold Factor Improved by the Electron Blocking Layer

نوع: Journal Paper

نویسنده : Kin-Tak Lam; Shoou-Jinn Chang

ناشر: IEEE

سال: 2014

GaN-Based Light-Emitting Diodes With Staircase Electron Injector Structure

نوع: Journal Paper

نویسنده : Shoou-Jinn Chang; Lin, Yen-Yu

ناشر: IEEE

سال: 2014

AlGaN-Based Vertical Injection Laser Diodes Using Inverse Tapered p-Waveguide for Efficient Hole Transport

نوع: Journal Paper

نویسنده : Satter, Md Mahbub; Lochner, Zachary; Tsung-Ting Kao; Yuh-Shiuan Liu; Xiao-Hang Li; Shyh-Chiang Shen; Dupuis, Russell; Yoder, P.D.

ناشر: IEEE

سال: 2014

Performance of Blue LEDs With N-AlGaN/N-GaN Superlattice as Electron-Blocking Layer

نوع: Journal Paper

نویسنده : Xiaopeng Yu; Guanghan Fan; Shuwen Zheng; Binbin Ding; Tao Zhang

ناشر: IEEE

سال: 2014

Tandem Structure for Efficiency Improvement in GaN Based Light-Emitting Diodes

نوع: Journal Paper

نویسنده : Miao-Chan Tsai; Leung, Bosco; Ta-Cheng Hsu; Yen-Kuang Kuo

ناشر: IEEE

سال: 2014

Advantages of GaN-Based Light-Emitting Diodes With Polarization-Reduced Chirped Multiquantum Barrier

نوع: Journal Paper

نویسنده : Yi An Yin; Naiyin Wang; Guanghan Fan; Shuti Li

ناشر: IEEE

سال: 2014

Effect of Stair-Case Electron Blocking Layer on the Performance of Blue InGaN Based LEDs

نوع: Journal Paper

نویسنده : Taiping Lu; Ziguang Ma; Chunhua Du; Yutao Fang; Fangsheng Chen; Yang Jiang; Lu Wang; Haiqiang Jia; Hong Chen

ناشر: IEEE

سال: 2014

Study of InGaN/GaN Light Emitting Diodes With Step-Graded Electron Blocking Layer

نوع: Journal Paper

نویسنده : Chao Liu; Zhiwei Ren; Xin Chen; Bijun Zhao; Xingfu Wang; Yian Yin; Shuti Li

ناشر: IEEE

سال: 2014

Committee list

نوع: Conference Paper

ناشر: IEEE

سال: 2014

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Message from the Workshop Organizers - IWSC 2014

GaN-Based LEDs With Hot/Cold Factor Improved by the Electron Blocking Layer

GaN-Based Light-Emitting Diodes With Staircase Electron Injector Structure

AlGaN-Based Vertical Injection Laser Diodes Using Inverse Tapered p-Waveguide for Efficient Hole Transport

Performance of Blue LEDs With N-AlGaN/N-GaN Superlattice as Electron-Blocking Layer

Tandem Structure for Efficiency Improvement in GaN Based Light-Emitting Diodes

Advantages of GaN-Based Light-Emitting Diodes With Polarization-Reduced Chirped Multiquantum Barrier

Effect of Stair-Case Electron Blocking Layer on the Performance of Blue InGaN Based LEDs

Study of InGaN/GaN Light Emitting Diodes With Step-Graded Electron Blocking Layer

Committee list

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Message from the Workshop Organizers - IWSC 2014

GaN-Based LEDs With Hot/Cold Factor Improved by the Electron Blocking Layer

GaN-Based Light-Emitting Diodes With Staircase Electron Injector Structure

AlGaN-Based Vertical Injection Laser Diodes Using Inverse Tapered p-Waveguide for Efficient Hole Transport

Performance of Blue LEDs With N-AlGaN/N-GaN Superlattice as Electron-Blocking Layer

Tandem Structure for Efficiency Improvement in GaN Based Light-Emitting Diodes

Advantages of GaN-Based Light-Emitting Diodes With Polarization-Reduced Chirped Multiquantum Barrier

Effect of Stair-Case Electron Blocking Layer on the Performance of Blue InGaN Based LEDs

Study of InGaN/GaN Light Emitting Diodes With Step-Graded Electron Blocking Layer

Committee list