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RISTechnological requirements for a self-aligned lateral SiGe HBT with the SiGe layer formed by Ge ion implantation in Si including theoretical performance
سال: 2006
خلاصه:
A new method for realization of self-aligned lateral SiGe-HBT (SiGe-SLHBT) is introduced and ac and dc simulations are performed based on a two-dimensional physical model. The fabrication process is simple and requires a minimum number of masks...
Small-signal characterization of SiGe-HBT fT-doubler up to 120 GHz
سال: 2005
خلاصه:
In this brief, small-signal characterizations of selectively implanted collector (SIC) and non-SIC SiGe-heterojunction bipolar transistors (HBT) fT-doublers up to 120 GHz are measured, analyzed, and compared with those of ...
On the second-order cost of TDMA for Gaussian multiple access
ناشر: IEEE
سال: 2014
RRTPI: Policy iteration on continuous domains using rapidly-exploring random trees
ناشر: IEEE
سال: 2014
On the capacity region of the two-user Interference Channel
ناشر: IEEE
سال: 2014
Electric vehicles operation simulation system based on multi-agent system
ناشر: IEEE
سال: 2014
Implementation of an automatic FLIR-scheme in a 20 kV distribution grid
ناشر: IEEE
سال: 2014