Search

نمایش تعداد 1-5 از 5

Thermal analysis and thermal optimization of through silicon via in 3D IC

نوع: Conference Paper

نویسنده : Jingyan Fu; Ligang Hou; Bo Lu; Jinhui Wang

ناشر: IEEE

سال: 2014

A 0.5-V P-Well/Deep N-Well Photodetector in 65-nm CMOS for Monolithic 850-nm Optical Receivers

نوع: Journal Paper

نویسنده : Quan Pan; Zhengxiong Hou; Yu Li; Poon, Andrew W.; Yue, C. Patrick

ناشر: IEEE

سال: 2014

Temperature-Dependent Internal Quantum Efficiency of Blue High-Brightness Light-Emitting Diodes

نوع: Journal Paper

نویسنده : Titkov, Ilya E.; Karpov, Sergey Yu; Yadav, Ankesh; Zerova, Vera L.; Zulonas, Modestas; Galler, Bastian; Strassburg, Martin; Pietzonka, Ines; Lugauer, Hans-Juergen; Rafailov, E.U.

ناشر: IEEE

سال: 2014

kV-Class GaN-on-Si HEMTs Enabling 99% Efficiency Converter at 800 V and 100 kHz

نوع: Journal Paper

نویسنده : Wu, Y.-F.; Gritters, J.; Shen, L.; Smith, R.P.; Swenson, Brian

ناشر: IEEE

سال: 2014

Super resolution WiFi indoor localization and tracking

نوع: Conference Paper

نویسنده : Salman, Naveed; Alsindi, Nayef; Mihaylova, Lyudmila; Kemp, A.H.

ناشر: IEEE

سال: 2014

Search

Thermal analysis and thermal optimization of through silicon via in 3D IC

A 0.5-V P-Well/Deep N-Well Photodetector in 65-nm CMOS for Monolithic 850-nm Optical Receivers

Temperature-Dependent Internal Quantum Efficiency of Blue High-Brightness Light-Emitting Diodes

kV-Class GaN-on-Si HEMTs Enabling 99% Efficiency Converter at 800 V and 100 kHz

Super resolution WiFi indoor localization and tracking

نویسنده

ناشر

سال

کلیدواژه

نوع

زبان

نوع محتوا

عنوان ناشر

Search

Filters

Thermal analysis and thermal optimization of through silicon via in 3D IC

A 0.5-V P-Well/Deep N-Well Photodetector in 65-nm CMOS for Monolithic 850-nm Optical Receivers

Temperature-Dependent Internal Quantum Efficiency of Blue High-Brightness Light-Emitting Diodes

kV-Class GaN-on-Si HEMTs Enabling 99&#x0025; Efficiency Converter at 800&#x00A0;V and 100&#x00A0;kHz

Super resolution WiFi indoor localization and tracking

kV-Class GaN-on-Si HEMTs Enabling 99% Efficiency Converter at 800 V and 100 kHz