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RISComparative Study of FinFETs versus 22nm Bulk CMOS technologies: SRAM Design Perspective
سال: 2014
خلاصه:
with the effect of device
parameters on their characteristics are explored. Both FinFET
and CMOS devices are used in 6T and 8T-SRAM cells.
Simulation results show significant improvements for FinFETbased
SRAMs compared to bulk CMOS...
Dual focus polarisation lens: Theory
ناشر: IEEE
سال: 2014
Combining Decomposition and Lumping to Evaluate Semi-hierarchical Systems
ناشر: IEEE
سال: 2014
Mobile Simulator for Risk Analysis
ناشر: IEEE
سال: 2014
Applying the Prometheus Methodology for an Internet of Things Architecture
ناشر: IEEE
سال: 2014
LDACS1-based non-cooperative surveillance
ناشر: IEEE
سال: 2014
A New Write Assist Technique for SRAM Design in 65nm CMOS Technology
سال: 2015
خلاصه:
in this paper, a new write assist technique for SRAM arrays is proposed. In this technique, to improve the
write features of the SRAM cell, a negative voltage is applied to one of the bitlines in the SRAM cell while
another bitline...