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نمایش تعداد 1-10 از 11

An efficient reliable PUF-based cryptographic key generator in 65nm CMOS

نوع: Conference Paper

نویسنده : Bhargava, M. , Mai, K.

ناشر: IEEE

سال: 2014

Business Models of Developer Platforms in the Telecommunications Industry -- An Explorative Case Study Analysis

نوع: Conference Paper

نویسنده : Kuebel, H. , Limbach, F. , Zarnekow, R.

ناشر: IEEE

سال: 2014

Razor-Lite: A Light-Weight Register for Error Detection by Observing Virtual Supply Rails

نوع: Journal Paper

نویسنده : Inyong Kwon; Seongjong Kim; Fick, D.; Myungbo Kim; Yen-Po Chen; Sylvester, D.

ناشر: IEEE

سال: 2014

Resonant Body Transistors in IBM's 32 nm SOI CMOS Technology

نوع: Journal Paper

نویسنده : Marathe, Radhika; Bahr, Bichoy; Wentao Wang; Mahmood, Zohaib; Daniel, Luca; Weinstein, D.

ناشر: IEEE

سال: 2014

Influence of humidity and temperature on the dielectric properties of thermally sprayed ceramic MgAl<inf>2</inf>O<inf>4</inf> coatings

نوع: Conference Paper

نویسنده : Niittymaki, Minna; Lahti, Kari; Suhonen, Tomi; Kanerva, Ulla; Metsajoki, Jarkko

ناشر: IEEE

سال: 2014

Research on corona inception electric-field strength and critical electric-field values for valve hall fittings

نوع: Conference Paper

نویسنده : Wu, Hao; Wang, Jialong; Liu, Peng; Peng, Zongren; Deng, Zhixiang; Wei, Xinzhuo

ناشر: IEEE

سال: 2014

Bridging the Gap between Spatial Data Sources and Mashup Applications

نوع: Conference Paper

ناشر: IEEE

سال: 2014

Low switching frequency stator flux linkage observer for interior permanent magnet synchronous machines

نوع: Conference Paper

نویسنده : Xu, Wei; Lorenz, Robert D.

ناشر: IEEE

سال: 2014

A 32 Gb/s Backplane Transceiver With On-Chip AC-Coupling and Low Latency CDR in 32 nm SOI CMOS Technology

نوع: Journal Paper

نویسنده : Gangasani, Gautam R.; Chun-Ming Hsu; Bulzacchelli, John F.; Beukema, Troy; Kelly, Wayne; Xu, Hui H.; Freitas, David; Prati, Andrea; Gardellini, Daniele; Reutemann, Robert; Cervelli, Giovanni; Hertle, Juergen; Baecher, Matthew; Garlett, Jon; Francese, Pier-Andrea; Ewen, John F.; Hanson, D.; Storaska, Daniel W.; Meghelli, Mounir

ناشر: IEEE

سال: 2014

55 dB DC gain, robust to PVT single-stage fully differential amplifier on 45 nm SOI-CMOS technology

نوع: Journal Paper

نویسنده : Gó mez, H.; Espinosa, G.

ناشر: IET

سال: 2014

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An efficient reliable PUF-based cryptographic key generator in 65nm CMOS

Business Models of Developer Platforms in the Telecommunications Industry -- An Explorative Case Study Analysis

Razor-Lite: A Light-Weight Register for Error Detection by Observing Virtual Supply Rails

Resonant Body Transistors in IBM's 32 nm SOI CMOS Technology

Influence of humidity and temperature on the dielectric properties of thermally sprayed ceramic MgAl<inf>2</inf>O<inf>4</inf> coatings

Research on corona inception electric-field strength and critical electric-field values for valve hall fittings

Bridging the Gap between Spatial Data Sources and Mashup Applications

Low switching frequency stator flux linkage observer for interior permanent magnet synchronous machines

A 32 Gb/s Backplane Transceiver With On-Chip AC-Coupling and Low Latency CDR in 32 nm SOI CMOS Technology

55 dB DC gain, robust to PVT single-stage fully differential amplifier on 45 nm SOI-CMOS technology

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An efficient reliable PUF-based cryptographic key generator in 65nm CMOS

Business Models of Developer Platforms in the Telecommunications Industry -- An Explorative Case Study Analysis

Razor-Lite: A Light-Weight Register for Error Detection by Observing Virtual Supply Rails

Resonant Body Transistors in IBM's 32 nm SOI CMOS Technology

Influence of humidity and temperature on the dielectric properties of thermally sprayed ceramic MgAl<inf>2</inf>O<inf>4</inf> coatings

Research on corona inception electric-field strength and critical electric-field values for valve hall fittings

Bridging the Gap between Spatial Data Sources and Mashup Applications

Low switching frequency stator flux linkage observer for interior permanent magnet synchronous machines

A 32 Gb/s Backplane Transceiver With On-Chip AC-Coupling and Low Latency CDR in 32 nm SOI CMOS Technology

55 dB DC gain, robust to PVT single-stage fully differential amplifier on 45 nm SOI-CMOS technology