A dual material gate structure for a 4H-SiC MOSFET have been proposed as a possible way to reduce short channel effects such as DIBL, hot electron effects, and high electric fields. The gate of the DMG

(Dual Material Gate) 4H-SiC MOSFET...

A double-recessed 4H-SiC MESFETs with multi-recessed sourcedrain drift region was proposed. The multi-recessed drift region is to reduce channel thickness between gate and drain as well as eliminate gate depletion layer extension to sourcedrain...

of the proposed

structures are simulated and compared with the conventional

4H–SiC MESFET. Simulation results disclose that, compared to

the conventional structure, the structure with recessed full gate

and channel (FGC):

1...