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GaAs-on-insulator fabricated via ion-cut in epitaxial GaAs /Ge substrate

Type: Conference Paper

Author : Yongwei Chang; Da Chen; Zengfeng Di; Miao Zhang; Wenjie Yu; Xi Wang

Publisher: IEEE

Year: 2014

1-Dodecanethiol based highly stable self-assembled monolayers for germanium passivation

Type: Journal Paper

Author : Qi Cai; Baojian Xu; Lin Ye; Zengfeng Di; Shanluo Huang; Xiaowei Du; Jishen Zhang; Qinghui Jin; Jianlong Zhao

Year: 2015

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Germanium n<sup>+</sup>/p Shallow Junction With Record Rectification Ratio Formed by Low-Temperature Preannealing and Excimer Laser Annealing

Type: Journal Paper

Author : Chen Wang; Cheng Li; Guangyang Lin; Weifang Lu; Jiangbin Wei; Wei Huang; Hongkai Lai; Songyan Chen; Zengfeng Di; Miao Zhang

Publisher: IEEE

Year: 2014

Fluorinated Graphene in Interface Engineering of Ge-Based Nanoelectronics

Type: Journal Paper

Author : Xiaohu Zheng; Miao Zhang; Xiaohua Shi; Gang Wang; Li Zheng; Yuehui Yu; Anping Huang; Paul K. Chu; Heng Gao; Wei Ren; Zengfeng Di; Xi Wang

Year: 2015

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Manipulation of strain state in silicon nanoribbons by top-down approach

Type: Journal Paper

Author : Zhiqiang Mu; Miao Zhang; Zhongying Xue; Gaodi Sun; Qinglei Guo; Da Chen; Gaoshan Huang; Yongfeng Mei; Paul K. Chu; Zengfeng Di; Xi Wang

Year: 2015

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A new mild, clean and highly efficient method for the preparation of graphene quantum dots without by-products

Type: Journal Paper

Author : Chong Zhu; Siwei Yang; Gang Wang; Runwei Mo; Peng He; Jing Sun; Zengfeng Di; Zhenhui Kang; Ningyi Yuan; Jianning Ding; Guqiao Ding; Xiaoming Xie

Year: 2015

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GaAs-on-insulator fabricated via ion-cut in epitaxial GaAs /Ge substrate

1-Dodecanethiol based highly stable self-assembled monolayers for germanium passivation

Germanium n<sup>+</sup>/p Shallow Junction With Record Rectification Ratio Formed by Low-Temperature Preannealing and Excimer Laser Annealing

Fluorinated Graphene in Interface Engineering of Ge-Based Nanoelectronics

Manipulation of strain state in silicon nanoribbons by top-down approach

A new mild, clean and highly efficient method for the preparation of graphene quantum dots without by-products

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GaAs-on-insulator fabricated via ion-cut in epitaxial GaAs /Ge substrate

1-Dodecanethiol based highly stable self-assembled monolayers for germanium passivation

Germanium n<sup>&#x002B;</sup>/p Shallow Junction With Record Rectification Ratio Formed by Low-Temperature Preannealing and Excimer Laser Annealing

Fluorinated Graphene in Interface Engineering of Ge-Based Nanoelectronics

Manipulation of strain state in silicon nanoribbons by top-down approach

A new mild, clean and highly efficient method for the preparation of graphene quantum dots without by-products

Germanium n<sup>+</sup>/p Shallow Junction With Record Rectification Ratio Formed by Low-Temperature Preannealing and Excimer Laser Annealing