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Atomistic Pseudo-Transient BTI Simulation With Inherent Workload Memory

Type: Journal Paper

Author : Rodopoulos, Dimitrios; Weckx, Pieter; Noltsis, Michail; Catthoor, Francky; Soudris, Dimitrios

Publisher: IEEE

Year: 2014

Implications of BTI-Induced Time-Dependent Statistics on Yield Estimation of Digital Circuits

Type: Journal Paper

Author : Weckx, Pieter; Kaczer, Ben; Toledano-Luque, Maria; Raghavan, Praveen; Franco, Jacopo; Roussel, P.J.; Groeseneken, Guido; Catthoor, Francky

Publisher: IEEE

Year: 2014

Comparison of Reaction-Diffusion and Atomistic Trap-Based BTI Models for Logic Gates

Type: Journal Paper

Author : Kukner, Halil; Khan, Sharifullah; Weckx, Pieter; Raghavan, Praveen; Hamdioui, Said; Kaczer, Ben; Catthoor, Francky; Van der Perre, Liesbet; Lauwereins, Rudy; Groeseneken, Guido

Publisher: IEEE

Year: 2014

Interplay Between Statistical Variability and Reliability in Contemporary pMOSFETs: Measurements Versus Simulations

Type: Journal Paper

Author : Hussin, R.; Amoroso, Salvatore Maria; Gerrer, Louis; Kaczer, Ben; Weckx, Pieter; Franco, Jacopo; Vanderheyden, A.; Vanhaeren, D.; Horiguchi, Naoto; Asenov, Asen

Publisher: IEEE

Year: 2014

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Atomistic Pseudo-Transient BTI Simulation With Inherent Workload Memory

Implications of BTI-Induced Time-Dependent Statistics on Yield Estimation of Digital Circuits

Comparison of Reaction-Diffusion and Atomistic Trap-Based BTI Models for Logic Gates

Interplay Between Statistical Variability and Reliability in Contemporary pMOSFETs: Measurements Versus Simulations

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Atomistic Pseudo-Transient BTI Simulation With Inherent Workload Memory

Implications of BTI-Induced Time-Dependent Statistics on Yield Estimation of Digital Circuits

Comparison of Reaction-Diffusion and Atomistic Trap-Based BTI Models for Logic Gates

Interplay Between Statistical Variability and Reliability in Contemporary pMOSFETs: Measurements Versus Simulations