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Observation of Large Exchange Bias Effect in Bulk Mn50Ni41Sn9 Heusler Alloy

Type: Journal Paper

Author : Sharma, Jaibir; Suresh, K.G.

Publisher: IEEE

Year: 2014

A 134 GHz <formula formulatype="inline"> <img src="/images/tex/21533.gif" alt="{+}4"> </formula> dBm Frequency Doubler at <formula formulatype="inline"> <img src="/images/tex/647.gif" alt="f_{\\max }"> </formula> in 130 nm CMOS

Type: Journal Paper

Author : Sharma, Jaibir; Dinc, Tolga; Krishnaswamy, Harish

Publisher: IEEE

Year: 2014

Etch-hole design in encapsulation for better robustness

Type: Conference Paper

Author : Lee, Jae-Wung; Sharma, Jaibir; Merugu, Srinivas; Singh, Navab

Publisher: IEEE

Year: 2014

Robust Pop-Up Shape Encapsulation Using Dual-Sealing

Type: Journal Paper

Author : Jae-Wung Lee; Sharma, Jaibir; Merugu, Srinivas; Singh, Navab

Publisher: IEEE

Year: 2014

Air-gap in encapsulation for fast release and safe sealing

Type: Conference Paper

Author : Lee, Jae-Wung; Merugu, Srinivas; Sharma, Jaibir; Li, Geng; Singh, Navab

Publisher: IEEE

Year: 2014

Calibrations for Millimeter-Wave Silicon Transistor Characterization

Type: Journal Paper

Author : Williams, Dylan F.; Corson, Phillip; Sharma, Jaibir; Krishnaswamy, Harish; Wei Tai; George, Zacharias; Ricketts, David S.; Watson, Paul M.; Dacquay, Eric; Voinigescu, S.P.

Publisher: IEEE

Year: 2014

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Observation of Large Exchange Bias Effect in Bulk Mn<sub>50</sub>Ni<sub>41</sub>Sn<sub>9</sub> Heusler Alloy

A 134 GHz <formula formulatype="inline"> <img src="/images/tex/21533.gif" alt="{+}4"> </formula> dBm Frequency Doubler at <formula formulatype="inline"> <img src="/images/tex/647.gif" alt="f_{\\max }"> </formula> in 130 nm CMOS

Etch-hole design in encapsulation for better robustness

Robust Pop-Up Shape Encapsulation Using Dual-Sealing

Air-gap in encapsulation for fast release and safe sealing

Calibrations for Millimeter-Wave Silicon Transistor Characterization

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Observation of Large Exchange Bias Effect in Bulk Mn<sub>50</sub>Ni<sub>41</sub>Sn<sub>9</sub> Heusler Alloy

A 134 GHz <formula formulatype="inline"> <img src="/images/tex/21533.gif" alt="{+}4"> </formula> dBm Frequency Doubler at <formula formulatype="inline"> <img src="/images/tex/647.gif" alt="f_{\\max }"> </formula> in 130 nm CMOS

Etch-hole design in encapsulation for better robustness

Robust Pop-Up Shape Encapsulation Using Dual-Sealing

Air-gap in encapsulation for fast release and safe sealing

Calibrations for Millimeter-Wave Silicon Transistor Characterization