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A Dosimetry Methodology for Two-Photon Absorption Induced Single-Event Effects Measurements

Type: Journal Paper

Author : Khachatrian, Ani; Roche, Nicholas J.-H; McMorrow, Dale; Warner, Jeffrey H.; Buchner, Stephen P.; Melinger, Joseph S.

Publisher: IEEE

Year: 2014

Ion-Induced Charge-Collection Transients in p-Channel AlGaSb/InGaSb Heterojunction Field-Effect Transistors

Type: Journal Paper

Author : Warner, Jeffrey H.; McMorrow, Dale; Buchner, Steffen; Boos, J. Brad; Bennett, Brian R.; Cress, Cory D.; Champlain, James G.; Roche, Nicholas J.-H; Paillet, P.; Gaillardin, M.

Publisher: IEEE

Year: 2014

Comparative Analysis of Mechanical Strain and Silicon Film Thickness on Charge Collection Mechanisms of Nanometer Scaled SOI Devices Under Heavy Ion and Pulsed Laser Irradiation

Type: Journal Paper

Author : Gaillardin, M.; Raine, M.; Duhamel, O.; Girard, S.; Paillet, P.; McMorrow, Dale; Warner, Jeffrey H.; Andrieu, F.; Barraud, S.; Faynot, O.; Roche, Nicholas J.-H

Publisher: IEEE

Year: 2014

Simulation of Light-Matter Interaction and Two-Photon Absorption Induced Charge Deposition by Ultrashort Optical Pulses in Silicon

Type: Journal Paper

Author : Hales, Joel M.; McMorrow, Dale; Roche, Nicholas J.-H; Khachatrian, Ani; Warner, Jeffrey H.; Buchner, Stephen P.; Melinger, Joseph S.; Perry, Joseph W.; Lotshaw, William T.; Dubikovsky, Vladislav

Publisher: IEEE

Year: 2014

Impact of Neutron-Induced Displacement Damage<newline/> on the ATREE Response in LM124 <newline/>Operational Amplifier

Type: Journal Paper

Author : Roig, Fabien; Dusseau, L.; Ribeiro, P.; Auriel, G.; Roche, Nicholas J.-H; Privat, A.; Vaille, J.-R.; Boch, J.; Saigne, F.; Marec, R.; Calvel, P.; Bezerra, F.; Ecoffet, R.; Azais, Bruno

Publisher: IEEE

Year: 2014

The Role of Feedback Resistors and TID Effects in the ASET Response of a High Speed Current Feedback Amplifier

Type: Journal Paper

Publisher: IEEE

Year: 2014

Single-Event Transient and Total Dose Response of Precision Voltage Reference Circuits Designed in a 90-nm SiGe BiCMOS Technology

Type: Journal Paper

Author : Cardoso, Adilson S.; Chakraborty, Partha S.; Karaulac, Nedeljko; Fleischhauer, David M.; Lourenco, Nelson E.; Fleetwood, Zachary E.; Omprakash, Anup P.; England, Troy D.; Jung, Sanghyuk; Najafizadeh, Laleh; Roche, Nicholas J.-H; Khachatrian, Ani; Warner, Jeffrey H.; McMorrow, Dale; Buchner, Stephen P.; En Xia Zhang; Cher Xuan Zhang; McCurdy, Michael W.; Reed, R.A.; Fleetwood, D.M.; Paki-Amouzou, Pauline; Cressler, John D.

Publisher: IEEE

Year: 2014

An Investigation of Single-Event Transients in C-SiGe HBT on SOI Current Mirror Circuits

Type: Journal Paper

Author : Seungwoo Jung; Lourenco, Nelson E.; Ickhyun Song; Oakley, Michael /A/.; England, Troy D.; Arora, Rajkumar; Cardoso, Adilson S.; Roche, Nicholas J.-H; Khachatrian, Ani; McMorrow, Dale; Buchner, Stephen P.; Melinger, Joseph S.; Warner, Jeffrey H.; Paki-Amouzou, Pauline; Babcock, Jeff /A/.; Cressler, John D.

Publisher: IEEE

Year: 2014

Design of Radiation-Hardened RF Low-Noise Amplifiers Using Inverse-Mode SiGe HBTs

Type: Journal Paper

Author : Ickhyun Song; Seungwoo Jung; Lourenco, Nelson E.; Raghunathan, Uppili S.; Fleetwood, Zachary E.; Zeinolabedinzadeh, Saeed; Gebremariam, Tikurete B.; Inanlou, Farzad; Roche, Nicholas J.-H; Khachatrian, Ani; McMorrow, Dale; Buchner, Stephen P.; Melinger, Joseph S.; Warner, Jeffrey H.; Paki-Amouzou, Pauline; Cressler, John D.

Publisher: IEEE

Year: 2014

On the Transient Response of a Complementary (npn <formula formulatype="inline"> <img src="/images/tex/515.gif" alt="+"> </formula> pnp) SiGe HBT BiCMOS Technology

Type: Journal Paper

Author : Lourenco, Nelson E.; Fleetwood, Zachary E.; Seungwoo Jung; Cardoso, Adilson S.; Chakraborty, Partha S.; England, Troy D.; Roche, Nicholas J.-H; Khachatrian, Ani; McMorrow, Dale; Buchner, Stephen P.; Melinger, Joseph S.; Warner, Jeffrey H.; Paki, Pauline; Kaynak, Mehmet; Tillack, Bernd; Knoll, D.; Cressler, John D.

Publisher: IEEE

Year: 2014

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A Dosimetry Methodology for Two-Photon Absorption Induced Single-Event Effects Measurements

Ion-Induced Charge-Collection Transients in p-Channel AlGaSb/InGaSb Heterojunction Field-Effect Transistors

Comparative Analysis of Mechanical Strain and Silicon Film Thickness on Charge Collection Mechanisms of Nanometer Scaled SOI Devices Under Heavy Ion and Pulsed Laser Irradiation

Simulation of Light-Matter Interaction and Two-Photon Absorption Induced Charge Deposition by Ultrashort Optical Pulses in Silicon

Impact of Neutron-Induced Displacement Damage<newline/> on the ATREE Response in LM124 <newline/>Operational Amplifier

The Role of Feedback Resistors and TID Effects in the ASET Response of a High Speed Current Feedback Amplifier

Single-Event Transient and Total Dose Response of Precision Voltage Reference Circuits Designed in a 90-nm SiGe BiCMOS Technology

An Investigation of Single-Event Transients in C-SiGe HBT on SOI Current Mirror Circuits

Design of Radiation-Hardened RF Low-Noise Amplifiers Using Inverse-Mode SiGe HBTs

On the Transient Response of a Complementary (npn <formula formulatype="inline"> <img src="/images/tex/515.gif" alt="+"> </formula> pnp) SiGe HBT BiCMOS Technology

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A Dosimetry Methodology for Two-Photon Absorption Induced Single-Event Effects Measurements

Ion-Induced Charge-Collection Transients in p-Channel AlGaSb/InGaSb Heterojunction Field-Effect Transistors

Comparative Analysis of Mechanical Strain and Silicon Film Thickness on Charge Collection Mechanisms of Nanometer Scaled SOI Devices Under Heavy Ion and Pulsed Laser Irradiation

Simulation of Light-Matter Interaction and Two-Photon Absorption Induced Charge Deposition by Ultrashort Optical Pulses in Silicon

Impact of Neutron-Induced Displacement Damage<newline/> on the ATREE Response in LM124 <newline/>Operational Amplifier

The Role of Feedback Resistors and TID Effects in the ASET Response of a High Speed Current Feedback Amplifier

Single-Event Transient and Total Dose Response of Precision Voltage Reference Circuits Designed in a 90-nm SiGe BiCMOS Technology

An Investigation of Single-Event Transients in C-SiGe HBT on SOI Current Mirror Circuits

Design of Radiation-Hardened RF Low-Noise Amplifiers Using Inverse-Mode SiGe HBTs

On the Transient Response of a Complementary (npn <formula formulatype="inline"> <img src="/images/tex/515.gif" alt="+"> </formula> pnp) SiGe HBT BiCMOS Technology