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Terahertz Plasmonics: Good Results and Great Expectations

Type: Journal Paper

Author : Otsuji, Taiichi; Shur, M.

Publisher: IEEE

Year: 2014

High-Performance Graphene Field-Effect Transistors With Extremely Small Access Length Using Self-Aligned Source and Drain Technique

Type: Journal Paper

Author : Jung, Myung-Ho; Park, Goon-Ho; Yoshida, Tomohiro; Fukidome, Hirokazu; Suemitsu, Tetsuya; Otsuji, Taiichi; Suemitsu, Maki

Publisher: IEEE

Year: 2013

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S3-P4: Impact of drain conductance in InGaaS-HEMTs operated in a class-F amplifier

Type: Conference Paper

Author : Yoshida, Tomohiro; Otsuji, Taiichi; Suemitsu, Tetsuya; Oyama, Masashi; Watanabe, Kunihiko; Umeda, Yohtaro

Publisher: IEEE

Year: 2014

S7-N2: Terahertz lasing and detection in double-graphene-layer structures

Type: Conference Paper

Author : Otsuji, Taiichi; Alshkin, Vladimir Ya.; Dubinov, Alexander A.; Ryzhii, Maxim; Mitin, Vladimir; Shur, Michael S.; Ryzhii, Victor

Publisher: IEEE

Year: 2014

Graphene materials and devices in terahertz science and technology

Type: Journal Paper

Author : Otsuji, Taiichi; Boubanga Tombet, Stephane Albon; Satou, Akira; Fukidome, Hirokazu; Suemitsu, Maki; Sano, Eiichi; Popov, Vyacheslav; Ryzhii, Maxim; Ryzhii, Victor

Year: 2012

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Emission and Detection of Terahertz Radiation Using Two-Dimensional Electrons in III–V Semiconductors and Graphene

Type: Journal Paper

Author : Otsuji, Taiichi; Watanabe, Takayuki; Boubanga Tombet, Stephane A.; Satou, Akira; Knap, Wojciech M.; Popov, Vyacheslav V.; Ryzhii, Maxim; Ryzhii, Victor

Year: 2013

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Terahertz Plasmonics: Good Results and Great Expectations

High-Performance Graphene Field-Effect Transistors With Extremely Small Access Length Using Self-Aligned Source and Drain Technique

S3-P4: Impact of drain conductance in InGaaS-HEMTs operated in a class-F amplifier

S7-N2: Terahertz lasing and detection in double-graphene-layer structures

Graphene materials and devices in terahertz science and technology

Emission and Detection of Terahertz Radiation Using Two-Dimensional Electrons in III–V Semiconductors and Graphene

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Terahertz Plasmonics: Good Results and Great Expectations

High-Performance Graphene Field-Effect Transistors With Extremely Small Access Length Using Self-Aligned Source and Drain Technique

S3-P4: Impact of drain conductance in InGaaS-HEMTs operated in a class-F amplifier

S7-N2: Terahertz lasing and detection in double-graphene-layer structures

Graphene materials and devices in terahertz science and technology

Emission and Detection of Terahertz Radiation Using Two-Dimensional Electrons in III–V Semiconductors and Graphene