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Frequency-Independent Warning Detection Sequential for Dynamic Voltage and Frequency Scaling in ASICs

Type: Journal Paper

Author : Das, Bishnu Prasad; Onodera, Hidetoshi

Publisher: IEEE

Year: 2014

On-Chip Measurement of Rise/Fall Gate Delay Using Reconfigurable Ring Oscillator

Type: Journal Paper

Author : Das, Bishnu Prasad; Onodera, Hidetoshi

Publisher: IEEE

Year: 2014

Modeling of advanced devices

Type: Conference Paper

Author : McAndrew, Colin; Onodera, Hidetoshi

Publisher: IEEE

Year: 2014

Numerical Analysis of Breakdown Voltage Enhancement in AlGaN/GaN HEMTs With a High-<formula formulatype="inline"> <img src="/images/tex/348.gif" alt="k"> </formula> Passivation Layer

Type: Journal Paper

Author : Hanawa, H.; Onodera, Hidetoshi; Nakajima, Akitoshi; Horio, K.

Publisher: IEEE

Year: 2014

Dependence of Cell Distance and Well-Contact Density on MCU Rates by Device Simulations and Neutron Experiments in a 65-nm Bulk Process

Type: Journal Paper

Author : Kuiyuan Zhang; Furuta, J.; Kobayashi, Kaoru; Onodera, Hidetoshi

Publisher: IEEE

Year: 2014

Development of the Noncontact Rotating System Using Combined Ring-Shaped HTS Bulks and Permanent Magnets

Type: Journal Paper

Author : Kim, S.B.; Ikegami, Tomoaki; Fujii, Yuka; Takahashi, Masaharu; Onodera, Hidetoshi

Publisher: IEEE

Year: 2014

Wide-supply-range all-digital leakage variation sensor for on-chip process and temperature monitoring

Type: Conference Paper

Author : Islam, A.K.M.Mahfuzul; Shiomi, Jun; Ishihara, Tohru; Onodera, Hidetoshi

Publisher: IEEE

Year: 2014

A body bias generator with wide supply-range down to threshold voltage for within-die variability compensation

Type: Conference Paper

Author : Kamae, Norihiro; Islam, A.K.M.Mahfuzul; Tsuchiya, Akira; Onodera, Hidetoshi

Publisher: IEEE

Year: 2014

A Low-Power and Area-Efficient Radiation-Hard Redundant Flip-Flop, DICE ACFF, in a 65 nm Thin-BOX FD-SOI

Type: Journal Paper

Author : Kobayashi, Kaoru; Kubota, K.; Masuda, Masahiro; Manzawa, Y.; Furuta, J.; Kanda, S.; Onodera, Hidetoshi

Publisher: IEEE

Year: 2014

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Frequency-Independent Warning Detection Sequential for Dynamic Voltage and Frequency Scaling in ASICs

On-Chip Measurement of Rise/Fall Gate Delay Using Reconfigurable Ring Oscillator

Modeling of advanced devices

Numerical Analysis of Breakdown Voltage Enhancement in AlGaN/GaN HEMTs With a High-<formula formulatype="inline"> <img src="/images/tex/348.gif" alt="k"> </formula> Passivation Layer

Dependence of Cell Distance and Well-Contact Density on MCU Rates by Device Simulations and Neutron Experiments in a 65-nm Bulk Process

Development of the Noncontact Rotating System Using Combined Ring-Shaped HTS Bulks and Permanent Magnets

Wide-supply-range all-digital leakage variation sensor for on-chip process and temperature monitoring

A body bias generator with wide supply-range down to threshold voltage for within-die variability compensation

A Low-Power and Area-Efficient Radiation-Hard Redundant Flip-Flop, DICE ACFF, in a 65 nm Thin-BOX FD-SOI

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Frequency-Independent Warning Detection Sequential for Dynamic Voltage and Frequency Scaling in ASICs

On-Chip Measurement of Rise/Fall Gate Delay Using Reconfigurable Ring Oscillator

Modeling of advanced devices

Numerical Analysis of Breakdown Voltage Enhancement in AlGaN/GaN HEMTs With a High-<formula formulatype="inline"> <img src="/images/tex/348.gif" alt="k"> </formula> Passivation Layer

Dependence of Cell Distance and Well-Contact Density on MCU Rates by Device Simulations and Neutron Experiments in a 65-nm Bulk Process

Development of the Noncontact Rotating System Using Combined Ring-Shaped HTS Bulks and Permanent Magnets

Wide-supply-range all-digital leakage variation sensor for on-chip process and temperature monitoring

A body bias generator with wide supply-range down to threshold voltage for within-die variability compensation

A Low-Power and Area-Efficient Radiation-Hard Redundant Flip-Flop, DICE ACFF, in a 65&#x00A0;nm Thin-BOX FD-SOI

A Low-Power and Area-Efficient Radiation-Hard Redundant Flip-Flop, DICE ACFF, in a 65 nm Thin-BOX FD-SOI