Search

Now showing items 1-7 of 7

Statistical aspects of FinFET based SRAM metrics subject to process and statistical variability

Type: Conference Paper

Author : Xingsheng Wang; Binjie Cheng; Millar, C.; Reid, D.; Asenov, A.

Publisher: IEEE

Year: 2014

A Self-Consistent Full 3-D Real-Space NEGF Simulator for Studying Nonperturbative Effects in Nano-MOSFETs

Type: Journal Paper

Author : Martinez, A.; Bescond, M.; Barker, J.R.; Svizhenko, A.; Anantram, M.P.; Millar, C.; Asenov, A.

Year: 2007

Request PDF

3D coupled electro-thermal simulations for SOI FinFET with statistical variations including the fin shape dependence of the thermal conductivity

Type: Conference Paper

Author : Wang, L.; Brown, A.R.; Nedjalkov, M.; Alexander, C.; Cheng, B.; Millar, C.; Asenov, A.

Publisher: IEEE

Year: 2014

3D coupled electro-thermal FinFET simulations including the fin shape dependence of the thermal conductivity

Type: Conference Paper

Author : Wang, L.; Brown, A.R.; Nedjalkov, M.; Alexander, C.; Cheng, B.; Millar, C.; Asenov, A.

Publisher: IEEE

Year: 2014

Accurate simulations of the interplay between process and statistical variability for nanoscale FinFET-based SRAM cell stability

Type: Conference Paper

Author : Xingsheng Wang; Binjie Cheng; Brown, A.R.; Millar, C.; Asenov, A.

Publisher: IEEE

Year: 2014

Variability-aware compact model strategy for 20-nm bulk MOSFETs

Type: Conference Paper

Author : Xingsheng Wang; Reid, D.; Liping Wang; Burenkov, A.; Millar, C.; Cheng, B.; Lange, A.; Lorenz, J.; Baer, E.; Asenov, A.

Publisher: IEEE

Year: 2014

Simultaneous simulation of systematic and stochastic process variations

Type: Conference Paper

Author : Lorenz, J.; Bar, E.; Burenkov, A.; Evanschitzky, P.; Asenov, A.; Wang, L.; Wang, X.; Brown, A.R.; Millar, C.; Reid, D.

Publisher: IEEE

Year: 2014

Search

Statistical aspects of FinFET based SRAM metrics subject to process and statistical variability

A Self-Consistent Full 3-D Real-Space NEGF Simulator for Studying Nonperturbative Effects in Nano-MOSFETs

3D coupled electro-thermal simulations for SOI FinFET with statistical variations including the fin shape dependence of the thermal conductivity

3D coupled electro-thermal FinFET simulations including the fin shape dependence of the thermal conductivity

Accurate simulations of the interplay between process and statistical variability for nanoscale FinFET-based SRAM cell stability

Variability-aware compact model strategy for 20-nm bulk MOSFETs

Simultaneous simulation of systematic and stochastic process variations

Author

Publisher

Year

Keywords

Type

Language (ISO)

Content Type

Publication Title

Search

Filters

Statistical aspects of FinFET based SRAM metrics subject to process and statistical variability

A Self-Consistent Full 3-D Real-Space NEGF Simulator for Studying Nonperturbative Effects in Nano-MOSFETs

3D coupled electro-thermal simulations for SOI FinFET with statistical variations including the fin shape dependence of the thermal conductivity

3D coupled electro-thermal FinFET simulations including the fin shape dependence of the thermal conductivity

Accurate simulations of the interplay between process and statistical variability for nanoscale FinFET-based SRAM cell stability

Variability-aware compact model strategy for 20-nm bulk MOSFETs

Simultaneous simulation of systematic and stochastic process variations