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RF and microwave characteristics of a 20nm gate length InAlN/GaN-based HEMT having a high “Figure of Merit”

Type: Conference Paper

Author : Bhattacharjee, A.; Lenka, T.R.

Publisher: IEEE

Year: 2014

Insight to the 2DEG transport and mobility effects of a 20nm recessed gate InAlN/AlN/GaN HEMT

Type: Conference Paper

Author : Bhattacharjee, A. , Lenka, T.R.

Publisher: IEEE

Year: 2014

RF characteristics and mobility performance of a 30nm Gate length E-mode Junctionless Nanowire transistor

Type: Conference Paper

Author : Sahoo, D. , Lenka, T.R.

Publisher: IEEE

Year: 2014

2DEG transport characteristics by self-consistent subband calculations of Schrödinger and poisson equations in InAlN/GaN HEMT

Type: Conference Paper

Author : Lenka, T.R.; Dash, G.N.; Panda, A.K.

Publisher: IEEE

Year: 2014

Comparative study of AlN/GaN HEMT and MOSHEMT structures by varying oxide thickness

Type: Conference Paper

Author : Swain, R.; Jena, K.; Gaini, A.; Lenka, T.R.

Publisher: IEEE

Year: 2014

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RF and microwave characteristics of a 20nm gate length InAlN/GaN-based HEMT having a high “Figure of Merit”

Insight to the 2DEG transport and mobility effects of a 20nm recessed gate InAlN/AlN/GaN HEMT

RF characteristics and mobility performance of a 30nm Gate length E-mode Junctionless Nanowire transistor

2DEG transport characteristics by self-consistent subband calculations of Schrödinger and poisson equations in InAlN/GaN HEMT

Comparative study of AlN/GaN HEMT and MOSHEMT structures by varying oxide thickness

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RF and microwave characteristics of a 20nm gate length InAlN/GaN-based HEMT having a high &#x201C;Figure of Merit&#x201D;

Insight to the 2DEG transport and mobility effects of a 20nm recessed gate InAlN/AlN/GaN HEMT

RF characteristics and mobility performance of a 30nm Gate length E-mode Junctionless Nanowire transistor

2DEG transport characteristics by self-consistent subband calculations of Schr&#x00F6;dinger and poisson equations in InAlN/GaN HEMT

Comparative study of AlN/GaN HEMT and MOSHEMT structures by varying oxide thickness

RF and microwave characteristics of a 20nm gate length InAlN/GaN-based HEMT having a high “Figure of Merit”

2DEG transport characteristics by self-consistent subband calculations of Schrödinger and poisson equations in InAlN/GaN HEMT