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Electro-grafted organic memristors: Properties and prospects for artificial neural networks based on STDP

Type: Conference Paper

Author : Cabaret, T.; Fillaud, L.; Jousselme, B.; Klein, J-O.; Derycke, V.

Publisher: IEEE

Year: 2014

Spin transfer torque memories and logic gates

Type: Conference Paper

Author : Mengxing Wang; Yu Zhang; Xueying Zhang; Klein, J.-O.; Chappert, C.; Weisheng Zhao

Publisher: IEEE

Year: 2014

One-step majority-logic-decodable codes enable STT-MRAM for high speed working memories

Type: Conference Paper

Author : Wang Kang; Weisheng Zhao; Lun Yang; Klein, J.-O.; Youguang Zhang; Ravclosona, D.

Publisher: IEEE

Year: 2014

A High-Reliability, Low-Power Magnetic Full Adder

Type: Journal Paper

Author : Yi Gang; Weisheng Zhao; Klein, J.-O.; Chappert, C.; Mazoyer, P.

Year: 2011

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A novel SEU-tolerant MRAM latch circuit based on C-element

Type: Conference Paper

Author : Deming Zhang; Wang Kang; Yuanqing Cheng; Geifei Wang; Ravelosona, D.; Youguang Zhang; Klein, J.-O.; Weisheng Zhao

Publisher: IEEE

Year: 2014

A dynamic reference scheme to improve the sensing reliability of magnetic random access memory

Type: Conference Paper

Author : Wang Kang; Zheng Li; Yuanqing Cheng; Klein, J.-O.; Youguang Zhang; Ravelosona, D.; Chappert, C.; Weisheng Zhao

Publisher: IEEE

Year: 2014

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Electro-grafted organic memristors: Properties and prospects for artificial neural networks based on STDP

Spin transfer torque memories and logic gates

One-step majority-logic-decodable codes enable STT-MRAM for high speed working memories

A High-Reliability, Low-Power Magnetic Full Adder

A novel SEU-tolerant MRAM latch circuit based on C-element

A dynamic reference scheme to improve the sensing reliability of magnetic random access memory

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Electro-grafted organic memristors: Properties and prospects for artificial neural networks based on STDP

Spin transfer torque memories and logic gates

One-step majority-logic-decodable codes enable STT-MRAM for high speed working memories

A High-Reliability, Low-Power Magnetic Full Adder

A novel SEU-tolerant MRAM latch circuit based on C-element

A dynamic reference scheme to improve the sensing reliability of magnetic random access memory