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A -Band Capacitor-Coupled QVCO Using Sinusoidal Current Bias Technique

Type: Journal Paper

Author : I-Shing Shen; Jou, C.F.

Year: 2012

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Complementary UWB LNA Design Using Asymmetrical Inductive Source Degeneration

Type: Journal Paper

Author : Hui-I Wu; Hu, R.; Jou, C.F.

Year: 2010

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A Low Voltage Mixer With Improved Noise Figure

Type: Journal Paper

Author : Chih-Hao Chen,; Pei-Yuan Chiang,; Jou, C.F.

Year: 2009

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An ultra low-power wakeup receiver for energy-efficient wireless senor network

Type: Conference Paper

Author : Yu Lin Tsou , Gong, C.-S.A. , Jou, C.F.

Publisher: IEEE

Year: 2014

77GHz power amplifier design using WIN 0.1μm GaAs pHEMT process

Type: Conference Paper

Author : Kuan-Ting Lai; Kun-Long Wu; Hu, R.; Jou, C.F.

Publisher: IEEE

Year: 2014

Wide-IF-Band CMOS Mixer Design

Type: Journal Paper

Author : Pei-Yuan Chiang; Chao-Wei Su; Sz-Yun Luo; Hu, R.; Jou, C.F.

Year: 2010

Microwave and millimeter-wave CMOS frequency doubler and tripler designs

Type: Conference Paper

Author : Kun-Long Wu; Han-Ting Tsai; Pei-Ling Tseng; Hu, R.; Jou, C.F.; Yu-Shao Shiao

Publisher: IEEE

Year: 2014

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A -Band Capacitor-Coupled QVCO Using Sinusoidal Current Bias Technique

Complementary UWB LNA Design Using Asymmetrical Inductive Source Degeneration

A Low Voltage Mixer With Improved Noise Figure

An ultra low-power wakeup receiver for energy-efficient wireless senor network

77GHz power amplifier design using WIN 0.1μm GaAs pHEMT process

Wide-IF-Band CMOS Mixer Design

Microwave and millimeter-wave CMOS frequency doubler and tripler designs

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A -Band Capacitor-Coupled QVCO Using Sinusoidal Current Bias Technique

Complementary UWB LNA Design Using Asymmetrical Inductive Source Degeneration

A Low Voltage Mixer With Improved Noise Figure

An ultra low-power wakeup receiver for energy-efficient wireless senor network

77GHz power amplifier design using WIN 0.1&#x03BC;m GaAs pHEMT process

Wide-IF-Band CMOS Mixer Design

Microwave and millimeter-wave CMOS frequency doubler and tripler designs

77GHz power amplifier design using WIN 0.1μm GaAs pHEMT process