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Drift-diffusion simulations of InAs/AlAsSb quantum dot intermediate-band solar cells

Type: Conference Paper

Author : Hellstroem, S.; Hubbard, S.M.

Publisher: IEEE

Year: 2014

Deep Burrows in Submarine Fan-Channel Deposits of the Cerro Toro Formation (Cretaceous), Chilean Patagonia: Implications For Firmground Development and Colonization in the Deep Sea

Type: Journal Paper

Author : Hubbard, S. M.; Shultz, M. R.

Year: 2008

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Study of deep levels in InAlAsSb grown via organometallic vapor phase epitaxy

Type: Conference Paper

Author : Nelson, G.T.; Bittner, Z.S.; Smith, B.; Forbes, D.V.; Hubbard, S.M.

Publisher: IEEE

Year: 2014

The effect of barrier composition on quantum dot solar cell performance

Type: Conference Paper

Author : Forbes, D.V.; Yushuai Dai; Polly, S.J.; Hellstroem, S.; Bailey, C.; Hubbard, S.M.

Publisher: IEEE

Year: 2014

Effects of doping on carrier confinement in InAs QD solar cells

Type: Conference Paper

Author : Polly, S.J.; Hellstrom, S.; Forbes, D.V.; Hubbard, S.M.

Publisher: IEEE

Year: 2014

Experimental examination of an InAs/GaAs(Sb)/AlAsSb quantum dot approach to the intermediate band solar cell

Type: Conference Paper

Author : Bittner, Z.S.; Laghumavarapu, R.B.; Hellstroem, S.; Huffaker, D.; Baolai Liang; Hubbard, S.M.

Publisher: IEEE

Year: 2014

Improving epitaxial regrowth interfaces as a means of improving doping superlattice solar cell performance

Type: Conference Paper

Author : Slocum, M.A.; Forbes, D.V.; Grede, A.J.; Hoven, N.M.; Hubbard, S.M.

Publisher: IEEE

Year: 2014

Electric field effect on carrier escape from InAs/GaAs quantum dots solar cells

Type: Conference Paper

Author : Yushuai Dai; Polly, S.; Hellstroem, S.; Forbes, D.V.; Hubbard, S.M.

Publisher: IEEE

Year: 2014

Impact of nanostructures and radiation environment on defect levels in III–V solar cells

Type: Conference Paper

Author : Hubbard, S.M.; Sato, S.-I.; Schmieder, K.; Strong, W.; Forbes, D.; Bailey, C.G.; Hoheisel, R.; Walters, R.J.

Publisher: IEEE

Year: 2014

Characterization of InAlAs solar cells grown by MOVPE

Type: Conference Paper

Author : Smith, B.L.; Hellstroem, S.D.; Nelson, G.T.; Bittner, Z.S.; Slocum, M.A.; Forbes, D.V.; Hubbard, S.M.

Publisher: IEEE

Year: 2014

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Drift-diffusion simulations of InAs/AlAsSb quantum dot intermediate-band solar cells

Deep Burrows in Submarine Fan-Channel Deposits of the Cerro Toro Formation (Cretaceous), Chilean Patagonia: Implications For Firmground Development and Colonization in the Deep Sea

Study of deep levels in InAlAsSb grown via organometallic vapor phase epitaxy

The effect of barrier composition on quantum dot solar cell performance

Effects of doping on carrier confinement in InAs QD solar cells

Experimental examination of an InAs/GaAs(Sb)/AlAsSb quantum dot approach to the intermediate band solar cell

Improving epitaxial regrowth interfaces as a means of improving doping superlattice solar cell performance

Electric field effect on carrier escape from InAs/GaAs quantum dots solar cells

Impact of nanostructures and radiation environment on defect levels in III–V solar cells

Characterization of InAlAs solar cells grown by MOVPE

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Drift-diffusion simulations of InAs/AlAsSb quantum dot intermediate-band solar cells

Deep Burrows in Submarine Fan-Channel Deposits of the Cerro Toro Formation (Cretaceous), Chilean Patagonia: Implications For Firmground Development and Colonization in the Deep Sea

Study of deep levels in InAlAsSb grown via organometallic vapor phase epitaxy

The effect of barrier composition on quantum dot solar cell performance

Effects of doping on carrier confinement in InAs QD solar cells

Experimental examination of an InAs/GaAs(Sb)/AlAsSb quantum dot approach to the intermediate band solar cell

Improving epitaxial regrowth interfaces as a means of improving doping superlattice solar cell performance

Electric field effect on carrier escape from InAs/GaAs quantum dots solar cells

Impact of nanostructures and radiation environment on defect levels in III&#x2013;V solar cells

Characterization of InAlAs solar cells grown by MOVPE

Impact of nanostructures and radiation environment on defect levels in III–V solar cells