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Impact of the Substrate Orientation on CHC Reliability in n-FinFETs—Separation of the Various Contributions

Type: Journal Paper

Author : Tallarico, Andrea Natale; Moonju Cho; Franco, Jacopo; Ritzenthaler, R.; Togo, Mitsuhiro; Horiguchi, Naoto; Groeseneken, Guido; Crupi, Felice

Publisher: IEEE

Year: 2014

Fast Ramped Voltage Characterization of Single Trap Bias and Temperature Impact on Time-Dependent <inline-formula> <img src="/images/tex/18637.gif" alt="V_{\\rm TH}"> </inline-formula> Variability

Type: Journal Paper

Author : Toledano-Luque, Maria; Degraeve, Robin; Roussel, P.J.; Ragnarsson, Lars-Ake; Chiarella, T.; Horiguchi, Naoto; Mocuta, Anda; Thean, A.

Publisher: IEEE

Year: 2014

A Simplified Method for (Circular) Transmission Line Model Simulation and Ultralow Contact Resistivity Extraction

Type: Journal Paper

Author : Hao Yu; Schaekers, Marc; Schram, T.; Collaert, Nadine; de Meyer, K.; Horiguchi, Naoto; Thean, A.; Barla, Kathy

Publisher: IEEE

Year: 2014

Improved Channel Hot-Carrier Reliability in <formula formulatype="inline"> <img src="/images/tex/387.gif" alt="p"> </formula>-FinFETs With Replacement Metal Gate by a Nitrogen Postdeposition Anneal Process

Type: Journal Paper

Author : Moonju Cho; Arimura, H.; Jae Woo Lee; Kaczer, Ben; Veloso, A.; Boccardi, Guillaume; Ragnarsson, Lars-Ake; Kauerauf, T.; Horiguchi, Naoto; Groeseneken, Guido

Publisher: IEEE

Year: 2014

Interplay Between Statistical Variability and Reliability in Contemporary pMOSFETs: Measurements Versus Simulations

Type: Journal Paper

Author : Hussin, R.; Amoroso, Salvatore Maria; Gerrer, Louis; Kaczer, Ben; Weckx, Pieter; Franco, Jacopo; Vanderheyden, A.; Vanhaeren, D.; Horiguchi, Naoto; Asenov, Asen

Publisher: IEEE

Year: 2014

A Low-Power HKMG CMOS Platform Compatible With Dram Node 2× and Beyond

Type: Journal Paper

Author : Ritzenthaler, R.; Schram, T.; Spessot, A.; Caillat, Christian; Aoulaiche, Marc; Moon Ju Cho; Kyoung Bong Noh; Son, Yeongrack; Hoon Joo Na; Kauerauf, T.; Douhard, B.; Nazir, A.; Soon Aik Chew; Milenin, A.P.; Altamirano-Sanchez, E.; Schoofs, Geert; Albert, J.; Sebai, Farid; Vecchio, Emma; Paraschiv, V.; Vandervorst, W.; Sun-Ghil Lee; Collaert, Nadine; Fazan, P.; Horiguchi, Naoto; Thean, Aaron Voon-Yew

Publisher: IEEE

Year: 2014

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Impact of the Substrate Orientation on CHC Reliability in n-FinFETs—Separation of the Various Contributions

Fast Ramped Voltage Characterization of Single Trap Bias and Temperature Impact on Time-Dependent <inline-formula> <img src="/images/tex/18637.gif" alt="V_{\\rm TH}"> </inline-formula> Variability

A Simplified Method for (Circular) Transmission Line Model Simulation and Ultralow Contact Resistivity Extraction

Improved Channel Hot-Carrier Reliability in <formula formulatype="inline"> <img src="/images/tex/387.gif" alt="p"> </formula>-FinFETs With Replacement Metal Gate by a Nitrogen Postdeposition Anneal Process

Interplay Between Statistical Variability and Reliability in Contemporary pMOSFETs: Measurements Versus Simulations

A Low-Power HKMG CMOS Platform Compatible With Dram Node 2× and Beyond

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Impact of the Substrate Orientation on CHC Reliability in n-FinFETs&#x2014;Separation of the Various Contributions

Fast Ramped Voltage Characterization of Single Trap Bias and Temperature Impact on Time-Dependent <inline-formula> <img src="/images/tex/18637.gif" alt="V_{\\rm TH}"> </inline-formula> Variability

A Simplified Method for (Circular) Transmission Line Model Simulation and Ultralow Contact Resistivity Extraction

Improved Channel Hot-Carrier Reliability in <formula formulatype="inline"> <img src="/images/tex/387.gif" alt="p"> </formula>-FinFETs With Replacement Metal Gate by a Nitrogen Postdeposition Anneal Process

Interplay Between Statistical Variability and Reliability in Contemporary pMOSFETs: Measurements Versus Simulations

A Low-Power HKMG CMOS Platform Compatible With Dram Node 2&#x00D7; and Beyond

Impact of the Substrate Orientation on CHC Reliability in n-FinFETs—Separation of the Various Contributions

A Low-Power HKMG CMOS Platform Compatible With Dram Node 2× and Beyond