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A Novel High-Efficiency Gate Drive Circuit for Normally Off-Type GaN FET

Type: Journal Paper

Author : Umegami, Hirokatsu; Hattori, Fumiya; Nozaki, Y.; Yamamoto, Manabu; Machida, Osamu

Publisher: IEEE

Year: 2014

An analysis of false turn-on mechanism on power devices

Type: Conference Paper

Author : Nishigaki, Akihiro; Umegami, Hirokatsu; Hattori, Fumiya; Martinez, Wilmar; Yamamoto, Masayoshi

Publisher: IEEE

Year: 2014

A capacitor-less gate drive circuit using two parasitic capacitors suitable for non-insulating-gate GaN FETs

Type: Conference Paper

Author : Ishihara, Masataka; Hattori, Fumiya; Umegami, Hirokatsu; Yamamoto, Masayoshi

Publisher: IEEE

Year: 2014

Author

Hattori, Fumiya (3)

Umegami, Hirokatsu (3)

Yamamoto, Masayoshi (2)

Ishihara, Masataka (1)

Machida, Osamu (1)

Martinez, Wilmar (1)

Nishigaki, Akihiro (1)

Nozaki, Y. (1)

Yamamoto, Manabu (1)

Publisher

IEEE (3)

Year

2014 (3)

Keywords

active discharged-type gate drive circuit (1)

battery chargers (1)

Capacitors (1)

Drives (1)

field effect transistors (1)

gallium compounds (1)

Gallium nitride (1)

GaN (1)

GaN field-effect transistor (GaN FET) (1)

gate drive (1)

Type

Conference Paper (2)

Journal Paper (1)

Language (ISO)

English (3)

Content Type

Metadata Only (3)

Publication Title

nergy Conversion Congress and Exposition (ECCE), 2014 IEEE (2)

Industry Applications, IEEE Transactions on (1)

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