Search

Author : Franco, J.; Kaczer, B.; Mitard, J.; Toledano-Luque, M.; Crupi, F.; Eneman, G.; Rousse, Ph. J.; Grasser, T.; Cho, M.; Kauerauf, T.; Witters, L.; Hellings, G.; Ragnarsson, L.-A; Horiguchi, N.; Heyns, M.; Groeseneken, G.

Year: 2012

Request PDF

Search

A 2.6 nW, 0.45 V Temperature-Compensated Subthreshold CMOS Voltage Reference

How to enlarge the bandwidth without increasing the noise in OP-AMP-based transimpedance amplifier

Enhanced sensitivity cross-correlation method for voltage noise measurements

Barrier Lowering and Backscattering Extraction in Short-Channel MOSFETs

Analysis of TFET based 6T SRAM cells implemented with state of the art silicon nanowires

A New Circuit Topology for the Realization of Very Low-Noise Wide-Bandwidth Transimpedance Amplifier

Author

Publisher

Year

Keywords

Type

Language (ISO)

Content Type

Publication Title

Search

Filters

A 2.6 nW, 0.45 V Temperature-Compensated Subthreshold CMOS Voltage Reference

How to enlarge the bandwidth without increasing the noise in OP-AMP-based transimpedance amplifier

Enhanced sensitivity cross-correlation method for voltage noise measurements

Barrier Lowering and Backscattering Extraction in Short-Channel MOSFETs

Analysis of TFET based 6T SRAM cells implemented with state of the art silicon nanowires

A New Circuit Topology for the Realization of Very Low-Noise Wide-Bandwidth Transimpedance Amplifier