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A New Interface-Trapped-Charge-Degraded Subthreshold Current Model for Quadruple-Gate MOSFETs

Type: Journal Paper

Author : Chiang Te-Kuang

Publisher: IEEE

Year: 2014

A Novel Quasi-3-D Interface-Trapped-Charge-Induced Threshold Voltage Model for Quadruple-Gate MOSFETs, Including Equivalent Number of Gates

Type: Journal Paper

Author : Chiang Te-Kuang

Publisher: IEEE

Year: 2014

A novel scaling theory for fully depleted pi-gate (ПG) MOSFETs

Type: Conference Paper

Author : Chiang, Te-Kuang; Gao, Hong-Wun; Liu, Che-Wei; Tsou, Tsung-Ying; Chiu, Yi-Hung

Publisher: IEEE

Year: 2014

Author

Chiang Te-Kuang (2)

Chiang, Te-Kuang (1)

Chiu, Yi-Hung (1)

Gao, Hong-Wun (1)

Liu, Che-Wei (1)

Tsou, Tsung-Ying (1)

Publisher

IEEE (3)

Year

2014 (3)

Keywords

interface states (2)

Logic gates (2)

Mathematical model (2)

MOSFET (2)

quadruple-gate MOSFET (2)

Semiconductor device modeling (2)

semiconductor device models (2)

Silicon (2)

silicon (2)

antenna radiation patterns (1)

Type

Journal Paper (2)

Conference Paper (1)

Language (ISO)

English (3)

Content Type

Metadata Only (3)

Publication Title

Electron Devices, IEEE Transactions on (2)

olid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on (1)

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