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RF Performance of Proton-Irradiated AlGaN/GaN HEMTs

Type: Journal Paper

Author : Jin Chen; En Xia Zhang; Cher Xuan Zhang; McCurdy, Michael W.; Fleetwood, D.M.; Schrimpf, R.D.; Kaun, Stephen W.; Kyle, Erin C. H.; Speck, James S.

Publisher: IEEE

Year: 2014

Mitigation of Total Dose Performance Degradation in an 8–18 GHz SiGe Reconfigurable Receiver

Type: Journal Paper

Author : Howard, Duane C.; Cardoso, Adilson S.; Fleetwood, Zachary E.; Lourenco, Nelson E.; England, Troy D.; Saha, Prabir K.; Shankar, Subramaniam; Diestelhorst, Ryan M.; En Xia Zhang; Cher Xuan Zhang; Paki-Amouzou, Pauline; Cressler, John D.

Publisher: IEEE

Year: 2014

Bias Dependence of Total Ionizing Dose Effects in SiGe-<formula formulatype="inline"> <img src="/images/tex/21594.gif" alt="{{\\rm SiO}_2}/{{\\rm HfO}_2} p"> </formula>MOS FinFETs

Type: Journal Paper

Author : Guo Xing Duan; Cher Xuan Zhang; En Xia Zhang; Hachtel, Jordan; Fleetwood, D.M.; Schrimpf, R.D.; Reed, R.A.; Alles, Michael L.; Pantelides, Sokrates T.; Bersuker, Gennadi; Young, Chadwin D.

Publisher: IEEE

Year: 2014

Total Ionizing Dose Effects on hBN Encapsulated Graphene Devices

Type: Journal Paper

Author : Cher Xuan Zhang; Bin Wang; Guo Xing Duan; En Xia Zhang; Fleetwood, D.M.; Alles, Michael L.; Schrimpf, R.D.; Rooney, Aidan P.; Khestanova, Ekaterina; Auton, Gregory; Gorbachev, Roman V.; Haigh, Sarah J.; Pantelides, Sokrates T.

Publisher: IEEE

Year: 2014

Single-Event Transient and Total Dose Response of Precision Voltage Reference Circuits Designed in a 90-nm SiGe BiCMOS Technology

Type: Journal Paper

Author : Cardoso, Adilson S.; Chakraborty, Partha S.; Karaulac, Nedeljko; Fleischhauer, David M.; Lourenco, Nelson E.; Fleetwood, Zachary E.; Omprakash, Anup P.; England, Troy D.; Jung, Sanghyuk; Najafizadeh, Laleh; Roche, Nicholas J.-H; Khachatrian, Ani; Warner, Jeffrey H.; McMorrow, Dale; Buchner, Stephen P.; En Xia Zhang; Cher Xuan Zhang; McCurdy, Michael W.; Reed, R.A.; Fleetwood, D.M.; Paki-Amouzou, Pauline; Cressler, John D.

Publisher: IEEE

Year: 2014

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RF Performance of Proton-Irradiated AlGaN/GaN HEMTs

Mitigation of Total Dose Performance Degradation in an 8–18 GHz SiGe Reconfigurable Receiver

Bias Dependence of Total Ionizing Dose Effects in SiGe-<formula formulatype="inline"> <img src="/images/tex/21594.gif" alt="{{\\rm SiO}_2}/{{\\rm HfO}_2} p"> </formula>MOS FinFETs

Total Ionizing Dose Effects on hBN Encapsulated Graphene Devices

Single-Event Transient and Total Dose Response of Precision Voltage Reference Circuits Designed in a 90-nm SiGe BiCMOS Technology

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RF Performance of Proton-Irradiated AlGaN/GaN HEMTs

Mitigation of Total Dose Performance Degradation in an 8&#x2013;18&#x00A0;GHz SiGe Reconfigurable Receiver

Bias Dependence of Total Ionizing Dose Effects in SiGe-<formula formulatype="inline"> <img src="/images/tex/21594.gif" alt="{{\\rm SiO}_2}/{{\\rm HfO}_2} p"> </formula>MOS FinFETs

Total Ionizing Dose Effects on hBN Encapsulated Graphene Devices

Single-Event Transient and Total Dose Response of Precision Voltage Reference Circuits Designed in a 90-nm SiGe BiCMOS Technology

Mitigation of Total Dose Performance Degradation in an 8–18 GHz SiGe Reconfigurable Receiver