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Preparation and anti-oxidation characteristics of ZrSiO4–SiBCN(O) amorphous coating

Type: Journal Paper

Author : Baojun Tang; Zelong Feng; Shujuan Hu; Yue Zhang

Year: 2015

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Instabilities induced by electron trapping/detrapping in high-k gate dielectrics of Flash memories: Evaluation and suppression

Type: Conference Paper

Author : Robinson, C.; Zhang, W.D.; Baojun Tang; Zheng, X.F.; Zhang, J.F.

Publisher: IEEE

Year: 2014

Experimental Evidence Toward Understanding Charge Pumping Signals in 3-D Devices With Poly-Si Channel

Type: Journal Paper

Author : Baojun Tang; Weidong Zhang; Toledano-Luque, Maria; Jian Fu Zhang; Degraeve, Robin; Zhigang Ji; Arreghini, A.; Van den bosch, G.; Van Houdt, J.

Publisher: IEEE

Year: 2014

Evaluation and Solutions for P/E Window Instability Induced by Electron Trapping in High-<inline-formula> <img src="/images/tex/19182.gif" alt="\\kappa "> </inline-formula> Intergate Dielectrics of Flash Memory Cells

Type: Journal Paper

Author : Baojun Tang; Wei Dong Zhang; Degraeve, Robin; Breuil, L.; Blomme, P.; Jian Fu Zhang; Zhigang Ji; Zahid, Mohammed; Toledano-Luque, Maria; Van den bosch, G.; Van Houdt, J.

Publisher: IEEE

Year: 2014

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Preparation and anti-oxidation characteristics of ZrSiO4–SiBCN(O) amorphous coating

Instabilities induced by electron trapping/detrapping in high-k gate dielectrics of Flash memories: Evaluation and suppression

Experimental Evidence Toward Understanding Charge Pumping Signals in 3-D Devices With Poly-Si Channel

Evaluation and Solutions for P/E Window Instability Induced by Electron Trapping in High-<inline-formula> <img src="/images/tex/19182.gif" alt="\\kappa "> </inline-formula> Intergate Dielectrics of Flash Memory Cells

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Preparation and anti-oxidation characteristics of ZrSiO4–SiBCN(O) amorphous coating

Instabilities induced by electron trapping/detrapping in high-k gate dielectrics of Flash memories: Evaluation and suppression

Experimental Evidence Toward Understanding Charge Pumping Signals in 3-D Devices With Poly-Si Channel

Evaluation and Solutions for P/E Window Instability Induced by Electron Trapping in High-<inline-formula> <img src="/images/tex/19182.gif" alt="\\kappa "> </inline-formula> Intergate Dielectrics of Flash Memory Cells