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A Watt-Level Stacked-FET Linear Power Amplifier in Silicon-on-Insulator CMOS

Type: Journal Paper

Author : Pornpromlikit, S.; Jinho Jeong; Presti, C.D.; Scuderi, A.; Asbeck, P.M.

Year: 2010

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Improved Envelope Injection and Termination (EIT) RF Power Amplifier With Envelope Equalization for Mobile Terminal Applications

Type: Journal Paper

Author : Kheirkhahi, Alireza; Yan, Jonmei J.; Asbeck, P.M.; Larson, Lawrence E.

Publisher: IEEE

Year: 2014

Characterization of Intermodulation and Memory Effects Using Offset Multisine Excitation

Type: Journal Paper

Author : Farsi, S.; Draxler, Paul J.; Gheidi, H.; Nauwelaers, Bart K. J. C.; Asbeck, P.; Schreurs, Dominique

Publisher: IEEE

Year: 2014

Multi-Drive Stacked-FET Power Amplifiers at 90 GHz in 45 nm SOI CMOS

Type: Journal Paper

Author : Agah, A.; Jayamon, Jefy Alex; Asbeck, P.M.; Larson, Lawrence E.; Buckwalter, James F.

Publisher: IEEE

Year: 2014

Novel Technique for Wideband Digital Predistortion of Power Amplifiers With an Under-Sampling ADC

Type: Journal Paper

Author : Youjiang Liu; Yan, Jonmei J.; Dabag, Hayg-Taniel; Asbeck, P.M.

Publisher: IEEE

Year: 2014

Power amplifiers and transmitters for RF and microwave

Type: Journal Paper

Author : Raab, F.H.; Asbeck, P.; Cripps, S.; Kenington, P.B.; Popovic, Z.B.; Pothecary, N.; Sevic, J.F.; Sokal, N.O.

Year: 2002

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Graphene FET-Based Zero-Bias RF to Millimeter-Wave Detection

Type: Journal Paper

Author : Moon, J. S.; Seo, H.-C.; Antcliffe, M.; Lin, S.; McGuire, C.; Le, D.; Nyakiti, L. O.; Gaskill, D. K.; Campbell, P. M.; Lee, K.-M.; Asbeck, P.

Publisher: IEEE

Year: 2012

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[IEEE 2011 International Semiconductor Device Research Symposium (ISDRS) - College Park, MD, USA (2011.12.7-2011.12.9)] 2011 International Semiconductor Device Research Symposium (ISDRS) - Graphene transistors for RF applications: Opportunities and challenges

Type: Journal Paper

Author : Moon, J. S.; Antcliffe, M.; Seo, H. C.; Lin, S. C.; Schmitz, A.; Milosavljevic, I.; McCalla, K.; Wong, D.; Gaskill, D. K.; Campbell, P. M.; Lee, K.-M.; Asbeck, P.

Year: 2011

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Ultra-low resistance ohmic contacts in graphene field effect transistors

Type: Journal Paper

Author : Moon, J. S.; Antcliffe, M.; Seo, H. C.; Curtis, D.; Lin, S.; Schmitz, A.; Milosavljevic, I.; Kiselev, A. A.; Ross, R. S.; Gaskill, D. K.; Campbell, P. M.; Fitch, R. C.; Lee, K.-M.; Asbeck, P.

Publisher: American Institute of Physics

Year: 2012

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Top-Gated Epitaxial Graphene FETs on Si-Face SiC Wafers With a Peak Transconductance of 600 mS/mm

Type: Journal Paper

Author : Moon, J.S.; Curtis, D.; Bui, S.; Hu, M.; Gaskill, D.K.; Tedesco, J.L.; Asbeck, P.; Jernigan, G.G.; VanMil, B.L.; Myers-Ward, R.L.; Eddy, C.R.; Campbell, P.M.; Weng, X.

Year: 2010

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A Watt-Level Stacked-FET Linear Power Amplifier in Silicon-on-Insulator CMOS

Improved Envelope Injection and Termination (EIT) RF Power Amplifier With Envelope Equalization for Mobile Terminal Applications

Characterization of Intermodulation and Memory Effects Using Offset Multisine Excitation

Multi-Drive Stacked-FET Power Amplifiers at 90 GHz in 45 nm SOI CMOS

Novel Technique for Wideband Digital Predistortion of Power Amplifiers With an Under-Sampling ADC

Power amplifiers and transmitters for RF and microwave

Graphene FET-Based Zero-Bias RF to Millimeter-Wave Detection

[IEEE 2011 International Semiconductor Device Research Symposium (ISDRS) - College Park, MD, USA (2011.12.7-2011.12.9)] 2011 International Semiconductor Device Research Symposium (ISDRS) - Graphene transistors for RF applications: Opportunities and challenges

Ultra-low resistance ohmic contacts in graphene field effect transistors

Top-Gated Epitaxial Graphene FETs on Si-Face SiC Wafers With a Peak Transconductance of 600 mS/mm

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A Watt-Level Stacked-FET Linear Power Amplifier in Silicon-on-Insulator CMOS

Improved Envelope Injection and Termination (EIT) RF Power Amplifier With Envelope Equalization for Mobile Terminal Applications

Characterization of Intermodulation and Memory Effects Using Offset Multisine Excitation

Multi-Drive Stacked-FET Power Amplifiers at 90 GHz in 45 nm SOI CMOS

Novel Technique for Wideband Digital Predistortion of Power Amplifiers With an Under-Sampling ADC

Power amplifiers and transmitters for RF and microwave

Graphene FET-Based Zero-Bias RF to Millimeter-Wave Detection

[IEEE 2011 International Semiconductor Device Research Symposium (ISDRS) - College Park, MD, USA (2011.12.7-2011.12.9)] 2011 International Semiconductor Device Research Symposium (ISDRS) - Graphene transistors for RF applications: Opportunities and challenges

Ultra-low resistance ohmic contacts in graphene field effect transistors

Top-Gated Epitaxial Graphene FETs on Si-Face SiC Wafers With a Peak Transconductance of 600 mS/mm