Search

Now showing items 1-10 of 35

Electro-thermal analysis of non-rectangular FinFET and modeling of fin shape effect on thermal resistance

Type: Journal Paper

Author : Fa. Karimi; Ali A. Orouji

Year: 2017

Request PDF

Nanoscale SiGe-on-insulator (SGOI) MOSFET with graded doping channel for improving leakage current and hot-carrier degradation

Type: Journal Paper

Author : Morteza Rahimian; Ali A. Orouji

Year: 2011

Request PDF

Dual material insulator SOI-LDMOSFET: A novel device for self-heating effect improvement

Type: Journal Paper

Author : Ali A. Orouji; Morteza Rahimian

Year: 2011

Request PDF

A novel technique at LDMOSs to improve the figure of merit

Type: Journal Paper

Author : Amin Pak; Ali A. Orouji

Year: 2016

Request PDF

A new nanoscale fin field effect transistor with embedded intrinsic region for high temperature applications

Type: Journal Paper

Author : Fa. Karimi; Ali A. Orouji

Year: 2016

Request PDF

A novel nanoscale fin field effect transistor by amended channel: Investigation and fundamental physics

Type: Journal Paper

Author : Fa. Karimi; Ali A. Orouji

Year: 2015

Request PDF

Dual material gate oxide stack symmetric double gate MOSFET: Improving short channel effects of nanoscale double gate MOSFET

Type: Conference Paper

Author : Pedram Razavi; Ali A. Orouji

Request PDF

A novel nanoscale MOSFET with modified buried layer for improving of AC performance and self-heating effect

Type: Journal Paper

Author : Morteza Rahimian; Ali A. Orouji

Publisher: Elsevier Science

Year: 2012

Request PDF

A new nanoscale and high temperature field effect transistor: Bi level FinFET

Type: Journal Paper

Author : Mahsa Mehrad; Ali A. Orouji

Publisher: Elsevier Science

Year: 2011

Request PDF

Leakage current reduction in nanoscale fully-depleted SOI MOSFETs with modified current mechanism

Type: Journal Paper

Author : Ali A. Orouji; Morteza Rahimian

Publisher: Elsevier Science

Year: 2012

Request PDF

Search

Electro-thermal analysis of non-rectangular FinFET and modeling of fin shape effect on thermal resistance

Nanoscale SiGe-on-insulator (SGOI) MOSFET with graded doping channel for improving leakage current and hot-carrier degradation

Dual material insulator SOI-LDMOSFET: A novel device for self-heating effect improvement

A novel technique at LDMOSs to improve the figure of merit

A new nanoscale fin field effect transistor with embedded intrinsic region for high temperature applications

A novel nanoscale fin field effect transistor by amended channel: Investigation and fundamental physics

Dual material gate oxide stack symmetric double gate MOSFET: Improving short channel effects of nanoscale double gate MOSFET

A novel nanoscale MOSFET with modified buried layer for improving of AC performance and self-heating effect

A new nanoscale and high temperature field effect transistor: Bi level FinFET

Leakage current reduction in nanoscale fully-depleted SOI MOSFETs with modified current mechanism

Author

Publisher

Year

Keywords

Type

Language (ISO)

Content Type

Publication Title

Search

Filters

Electro-thermal analysis of non-rectangular FinFET and modeling of fin shape effect on thermal resistance

Nanoscale SiGe-on-insulator (SGOI) MOSFET with graded doping channel for improving leakage current and hot-carrier degradation

Dual material insulator SOI-LDMOSFET: A novel device for self-heating effect improvement

A novel technique at LDMOSs to improve the figure of merit

A new nanoscale fin field effect transistor with embedded intrinsic region for high temperature applications

A novel nanoscale fin field effect transistor by amended channel: Investigation and fundamental physics

Dual material gate oxide stack symmetric double gate MOSFET: Improving short channel effects of nanoscale double gate MOSFET

A novel nanoscale MOSFET with modified buried layer for improving of AC performance and self-heating effect

A new nanoscale and high temperature field effect transistor: Bi level FinFET

Leakage current reduction in nanoscale fully-depleted SOI MOSFETs with modified current mechanism