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AlN/AlGaN HEMTs on AlN substrate for stable high-temperature operation

Type: Journal Paper

Author : Yafune, N.; Hashimoto, Shuji; Akita, K.; Yamamoto, Yusaku; Tokuda, Hirokuni; Kuzuhara, Masaaki

Publisher: IET

Year: 2014

Complementary metal-oxide semiconductor doherty power amplifier based on voltage combining method

Type: Journal Paper

Author : Chenxi Zhao; Byungjoon Park; Bumman Kim

Publisher: IET

Year: 2014

High Temperature Characteristics of GaN-Based Inverter Integrated With Enhancement-Mode (E-Mode) MOSFET and Depletion-Mode (D-Mode) HEMT

Type: Journal Paper

Author : Zhe Xu; Jinyan Wang; Yong Cai; Jingqian Liu; Zhen Yang; Xiaoping Li; Maojun Wang; Min Yu; Bing Xie; Wengang Wu; Xiaohua Ma; Jincheng Zhang; Yue Hao

Publisher: IEEE

Year: 2014

Multi-Drive Stacked-FET Power Amplifiers at 90 GHz in 45 nm SOI CMOS

Type: Journal Paper

Author : Agah, A.; Jayamon, Jefy Alex; Asbeck, P.M.; Larson, Lawrence E.; Buckwalter, James F.

Publisher: IEEE

Year: 2014

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AlN/AlGaN HEMTs on AlN substrate for stable high-temperature operation

Complementary metal-oxide semiconductor doherty power amplifier based on voltage combining method

High Temperature Characteristics of GaN-Based Inverter Integrated With Enhancement-Mode (E-Mode) MOSFET and Depletion-Mode (D-Mode) HEMT

Multi-Drive Stacked-FET Power Amplifiers at 90 GHz in 45 nm SOI CMOS

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AlN/AlGaN HEMTs on AlN substrate for stable high-temperature operation

Complementary metal-oxide semiconductor doherty power amplifier based on voltage combining method

High Temperature Characteristics of GaN-Based Inverter Integrated With Enhancement-Mode (E-Mode) MOSFET and Depletion-Mode (D-Mode) HEMT

Multi-Drive Stacked-FET Power Amplifiers at 90 GHz in 45 nm SOI CMOS