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Demonstration of Reduced Power Consumption MEMS LEL Sensor Prepared by a Novel Digital Microfluid Technique

Type: Journal Paper

Author : Lin Yang; Zhimin Zhou

Publisher: IEEE

Year: 2014

Evidences for field emission initiated glow discharge at high currents

Type: Conference Paper

Author : Wenger, D. , Knapp, W. , Hensel, B. , Tedde, S.F.

Publisher: IEEE

Year: 2014

Seed Layer Effect on the Magnetic Properties of Ultrathin Co/Pt Multilayers With Perpendicular Magnetic Anisotropy

Type: Journal Paper

Author : Chatterjee, J.; Tahmasebi, T.; Mertens, S.; Kar, G.S.; Tai Min; De Boeck, J.

Publisher: IEEE

Year: 2014

High Performance 400 °C p<sup>+</sup>/n Ge Junctions Using Cryogenic Boron Implantation

Type: Journal Paper

Author : Bhatt, Piyush; Swarnkar, Prashant; Basheer, Firdous; Hatem, Christopher; Nainani, Aneesh; Lodha, Saurabh

Publisher: IEEE

Year: 2014

A Wideband 6.9–17.7 GHz CMOS low-noise amplifier with a gain flattening technique

Type: Conference Paper

Author : Abdullah, Toahera; Roy, Apratim; Bashir, Juhi Johana; Noor, Tasnuva

Publisher: IEEE

Year: 2014

Discrete-time asymptotic reference tracking for an industrial robot

Type: Conference Paper

Author : Kozakova, Alena

Publisher: IEEE

Year: 2014

Exercise support system applying human-robot communication for mobile home

Type: Conference Paper

Author : Ho, Yihsin; Sato-Shimokawara, Eri; Yamaguchi, Toru; Matsuhira, Nobuto; Tagawa, Norio

Publisher: IEEE

Year: 2014

High Mobility Solution-Processed Hafnium Indium Zinc Oxide TFT With an Al-Doped <inline-formula> <img src="/images/tex/21641.gif" alt="{\\rm ZrO}_{2}"> </inline-formula> Gate Dielectric

Type: Journal Paper

Author : Yana Gao; Xifeng Li; Longlong Chen; Jifeng Shi; Xiao Wei Sun; Jianhua Zhang

Publisher: IEEE

Year: 2014

Mobility Enhancement and OFF Current Suppression in Atomic-Layer-Deposited ZnO Thin-Film Transistors by Post Annealing in O<sub>2</sub>

Type: Journal Paper

Author : Yang Geng; Wen Yang; Hong-Liang Lu; Yuan Zhang; Qing-Qing Sun; Peng Zhou; Peng-Fei Wang; Shi-Jin Ding; Zhang, David Wei

Publisher: IEEE

Year: 2014

Improving the specification of the WiMax ARQ operation

Type: Conference Paper

Author : Morales, A.; Villapol, M.E.; Contreras, L.

Publisher: IEEE

Year: 2014

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Demonstration of Reduced Power Consumption MEMS LEL Sensor Prepared by a Novel Digital Microfluid Technique

Evidences for field emission initiated glow discharge at high currents

Seed Layer Effect on the Magnetic Properties of Ultrathin Co/Pt Multilayers With Perpendicular Magnetic Anisotropy

High Performance 400 °C p<sup>+</sup>/n Ge Junctions Using Cryogenic Boron Implantation

A Wideband 6.9–17.7 GHz CMOS low-noise amplifier with a gain flattening technique

Discrete-time asymptotic reference tracking for an industrial robot

Exercise support system applying human-robot communication for mobile home

High Mobility Solution-Processed Hafnium Indium Zinc Oxide TFT With an Al-Doped <inline-formula> <img src="/images/tex/21641.gif" alt="{\\rm ZrO}_{2}"> </inline-formula> Gate Dielectric

Mobility Enhancement and OFF Current Suppression in Atomic-Layer-Deposited ZnO Thin-Film Transistors by Post Annealing in O<sub>2</sub>

Improving the specification of the WiMax ARQ operation

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Demonstration of Reduced Power Consumption MEMS LEL Sensor Prepared by a Novel Digital Microfluid Technique

Evidences for field emission initiated glow discharge at high currents

Seed Layer Effect on the Magnetic Properties of Ultrathin Co/Pt Multilayers With Perpendicular Magnetic Anisotropy

High Performance 400 &#x00B0;C p<sup>+</sup>/n Ge Junctions Using Cryogenic Boron Implantation

A Wideband 6.9&#x2013;17.7 GHz CMOS low-noise amplifier with a gain flattening technique

Discrete-time asymptotic reference tracking for an industrial robot

Exercise support system applying human-robot communication for mobile home

High Mobility Solution-Processed Hafnium Indium Zinc Oxide TFT With an Al-Doped <inline-formula> <img src="/images/tex/21641.gif" alt="{\\rm ZrO}_{2}"> </inline-formula> Gate Dielectric

Mobility Enhancement and OFF Current Suppression in Atomic-Layer-Deposited ZnO Thin-Film Transistors by Post Annealing in O<sub>2</sub>

Improving the specification of the WiMax ARQ operation

High Performance 400 °C p<sup>+</sup>/n Ge Junctions Using Cryogenic Boron Implantation

A Wideband 6.9–17.7 GHz CMOS low-noise amplifier with a gain flattening technique