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State-restrict MLC STT-RAM designs for high-reliable high-performance memory system

Type: Conference Paper

Publisher: IEEE

Year: 2014

Variable-Range Hopping and Thermal Activation Conduction of Y-Doped ZnO Nanocrystalline Films

Type: Journal Paper

Author : Lin, Tyrone T.; Young, S.L.; Kung, C.Y.; Chen, H.Z.; Kao, M.C.; Chang, M.C.; Ou, C.R.

Publisher: IEEE

Year: 2014

Leveraging Silicon Epitaxy to Fabricate Excellent Front Surface Regions for Thin Interdigitated Back Contact Solar Cells

Type: Journal Paper

Author : Baker-Finch, Simeon C.; Basore, Paul /A/.

Publisher: IEEE

Year: 2014

Analysis of Junction Leakage Current Failure of Nickel Silicide Abnormal Growth Using Advanced Transmission Electron Microscopy

Type: Journal Paper

Author : Kudo, S.; Hirose, Y.; Yamaguchi, Toru; Kashihara, K.; Maekawa, Keiichi; Asai, Kikuo; Murata, Norio; Katayama, Takeo; Asayama, K.; Hattori, Nobuyuki; Koyama, Tomofumi; Nakamae, Koji

Publisher: IEEE

Year: 2014

Mono-Like Silicon Growth Using Functional Grain Boundaries to Limit Area of Multicrystalline Grains

Type: Journal Paper

Author : Kutsukake, Kentaro; Usami, Noritaka; Ohno, Y.; Tokumoto, Yuki; Yonenaga, Ichiro

Publisher: IEEE

Year: 2014

Germanium Gate PhotoMOSFET Integrated to Silicon Photonics

Type: Journal Paper

Author : Going, Ryan W.; Loo, Jonathan; Tsu-Jae King Liu; Wu, Ming C.

Publisher: IEEE

Year: 2014

THz Difference-Frequency Generation in MOVPE-Grown Quantum Cascade Lasers

Type: Journal Paper

Author : Vijayraghavan, Karun; Min Jang; Aiting Jiang; Xiaojun Wang; Troccoli, Mariano; Belkin, Mikhail /A/.

Publisher: IEEE

Year: 2014

3.7 kV Vertical GaN PN Diodes

Type: Journal Paper

Author : Kizilyalli, Isik C.; Edwards, Andrew P.; Nie, Hui; Bour, David; Prunty, Thomas; Disney, Don

Publisher: IEEE

Year: 2014

Simulations, Practical Limitations, and Novel Growth Technology for InGaN-Based Solar Cells

Type: Journal Paper

Author : Fabien, Chloe /A/. M.; Moseley, Michael; Gunning, Brendan; Doolittle, W. Alan; Fischer, A.M.; Wei, Yong O.; Ponce, F.A.

Publisher: IEEE

Year: 2014

Electrical Characteristics and Deep Traps Spectra of Undoped GaN Films Grown on Si Using Different Strain-Relieving Buffer Types

Type: Journal Paper

Author : Polyakov, A.Y.; Smirnov, N.B.; Cheong Hyun Roh; Cheol-Koo Hahn; Han-Su Cho; Kozhukhova, Elena /A/.; Govorkov, A.V.; Ryzhuk, Roman Valerievich; Kargin, Nikolay Ivanovich; In-Hwan Lee

Publisher: IEEE

Year: 2014

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State-restrict MLC STT-RAM designs for high-reliable high-performance memory system

Variable-Range Hopping and Thermal Activation Conduction of Y-Doped ZnO Nanocrystalline Films

Leveraging Silicon Epitaxy to Fabricate Excellent Front Surface Regions for Thin Interdigitated Back Contact Solar Cells

Analysis of Junction Leakage Current Failure of Nickel Silicide Abnormal Growth Using Advanced Transmission Electron Microscopy

Mono-Like Silicon Growth Using Functional Grain Boundaries to Limit Area of Multicrystalline Grains

Germanium Gate PhotoMOSFET Integrated to Silicon Photonics

THz Difference-Frequency Generation in MOVPE-Grown Quantum Cascade Lasers

3.7 kV Vertical GaN PN Diodes

Simulations, Practical Limitations, and Novel Growth Technology for InGaN-Based Solar Cells

Electrical Characteristics and Deep Traps Spectra of Undoped GaN Films Grown on Si Using Different Strain-Relieving Buffer Types

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State-restrict MLC STT-RAM designs for high-reliable high-performance memory system

Variable-Range Hopping and Thermal Activation Conduction of Y-Doped ZnO Nanocrystalline Films

Leveraging Silicon Epitaxy to Fabricate Excellent Front Surface Regions for Thin Interdigitated Back Contact Solar Cells

Analysis of Junction Leakage Current Failure of Nickel Silicide Abnormal Growth Using Advanced Transmission Electron Microscopy

Mono-Like Silicon Growth Using Functional Grain Boundaries to Limit Area of Multicrystalline Grains

Germanium Gate PhotoMOSFET Integrated to Silicon Photonics

THz Difference-Frequency Generation in MOVPE-Grown Quantum Cascade Lasers

3.7 kV Vertical GaN PN Diodes

Simulations, Practical Limitations, and Novel Growth Technology for InGaN-Based Solar Cells

Electrical Characteristics and Deep Traps Spectra of Undoped GaN Films Grown on Si Using Different Strain-Relieving Buffer Types