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RISComparison of Low Field Electron Transport in SiC and GaN Structures for High-Power and High-Temperature Device Modeling
Comparison of Low Field Electron Transport in SiC and GaN Structures for High-Power and High-Temperature Device Modeling
A note on the relaxation time of two Markov chains on rooted phylogenetic tree spaces
Two relaxation time lattice Boltzmann equation for high Knudsen number flows using wall function approach
In the present study, we investigate gas flow in a micro-/nanochannel by using the two relaxation time lattice Boltzmann equation (TRT-LBE). The wall function approach is employed in order to consider the effect of Knudsen layer in transition flow...
A new calculation method for thermal and electical characterization in CdTe and CdSe semiconductors
A new calculation method has been developed and used to model electron transport properties in
semiconductor devices under thermal and electrical applications. Using the relaxation-time
approximation, the Boltzmann transport equation...
Comparison of electron-plasmon scattering effect on low-field electron mobility in ZnO and SiC
temperature increases from 300 - 600 K. The low temperature value of electron mobility increases
significantly with increasing doping concentration. The iterative results are in fair agreement with other
recent calculations obtained using the relaxation-time...
Thermoelectric power and low-field electron mobility in AlxGa1−xN lattice-matched to GaN
agreement with other recent calculations obtained using
the relaxation-time approximation and experimental methods....
A moving mesh method with variable mesh relaxation time
We propose a moving mesh adaptive approach for solving time-dependent partial differential equations. The motion of spatial grid points is governed by a moving mesh PDE (MMPDE) in which a mesh relaxation time τ is employed as a regularization...
An adaptive mesh method with variable relaxation time
a dynamic adaptive method for solving time-dependent differential
equations. The mesh velocities are governed by an equation in which a relaxation time is employed to
move nodes in such a way that they remain concentrated in regions...
Weak ductile shear zone beneath a major strike slip fault: Inferences from earthquake cycle model constrained by geodetic observations of the western North Anatolian Fault Zone
Capturing non-equilibrium effects of micro/nano scale gaseous flow using a novel lattice Boltzmann model
In this study, gaseous flow through a micro/nano-channel is investigated via a novel two relaxation
time lattice Boltzmann method (TRT-LBM). In this method, the slip velocity at the fluid-solid
interface is ...