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High Proton Radiation Tolerance of InAsSb Quantum-Well-Based micro-Hall Sensors

Type: Journal Paper

Author : Abderrahmane, Abdelkader; Pil Ju Ko; Okada, H.; Sato, Shin-Ichiro; Ohshima, T.; Shibasaki, Ichiro; Sandhu, A.

Publisher: IEEE

Year: 2014

The Effect of 3-MeV Proton Irradiation on the Performance of InGaN/GaN MQWs Solar Cells

Type: Journal Paper

Author : Zhen Bi; Jincheng Zhang; Ling Lv; Yue Hao

Publisher: IEEE

Year: 2014

Author

Abderrahmane, Abdelkader (1)

Jincheng Zhang (1)

Ling Lv (1)

Ohshima, T. (1)

Okada, H. (1)

Pil Ju Ko (1)

Sandhu, A. (1)

Sato, Shin-Ichiro (1)

Shibasaki, Ichiro (1)

Yue Hao (1)

Publisher

IEEE (2)

Year

2014 (2)

Keywords

indium compounds (2)

proton fluence (2)

quantum well devices (2)

AlInSb-InAsSb-AlInSb (1)

aluminium compounds (1)

Charge carrier density (1)

conversion efficiency (1)

electron volt energy 3 MeV (1)

electron volt energy 380 keV (1)

Films (1)

Type

Journal Paper (2)

Language (ISO)

English (2)

Content Type

Metadata Only (2)

Publication Title

Electron Device Letters, IEEE (1)

Photonics Technology Letters, IEEE (1)

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