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Disturbance detection in the MV and the LV distribution networks using time-domain method

Type: Conference Paper

Author : Ukil, A.

Publisher: IEEE

Year: 2014

Thin-Film Bipolar Transistors on Recrystallized Polycrystalline Silicon Without Impurity Doped Junctions: Proposal and Investigation

Type: Journal Paper

Author : Nadda, Kanika; Kumar, M.J.

Publisher: IEEE

Year: 2014

Progress in Laser-Crystallized Thin-Film Polycrystalline Silicon Solar Cells: Intermediate Layers, Light Trapping, and Metallization

Type: Journal Paper

Author : Dore, Jonathon; Ong, Dennis; Varlamov, Sergey; Egan, Renate; Green, Martin /A/.

Publisher: IEEE

Year: 2014

Accurate High Temperature Measurements Using Local Polysilicon Heater Structures

Type: Journal Paper

Author : Pobegen, Gregor; Nelhiebel, Michael; de Filippis, Stefano; Grasser, Tibor

Publisher: IEEE

Year: 2014

Development of Polycrystalline Silicon Based Photonic Crystal Membrane for Mid-Infrared Applications

Type: Journal Paper

Author : Chong Pei Ho; Pitchappa, Prakash; Kropelnicki, Piotr; Jian Wang; Yuandong Gu; Chengkuo Lee

Publisher: IEEE

Year: 2014

Source-Gated Transistors for Power- and Area-Efficient AMOLED Pixel Circuits

Type: Journal Paper

Author : Xiaoli Xu; Sporea, Radu /A/.; Xiaojun Guo

Publisher: IEEE

Year: 2014

Dependence of the Noise Behavior on the Drain Current for Thin Film Transistors

Type: Journal Paper

Author : Ya-Hsiang Tai; Chun-Yi Chang; Chung-Lun Hsieh; Yung-Hsuan Yang; Wei-Kuang Chao; Huan-Ean Chen

Publisher: IEEE

Year: 2014

A Hybrid a-Si and Poly-Si TFTs Technology for AMOLED Pixel Circuits

Type: Journal Paper

Author : Longyan Wang; Lei Sun; Dedong Han; Yi Wang; Mansun Chan; Shengdong Zhang

Publisher: IEEE

Year: 2014

Polycrystalline Silicon Nanowires Synthesis Compatible With CMOS Technology for Integrated Gas Sensing Applications

Type: Journal Paper

Author : Rogel, Regis; Jacques, Emmanuel; Pichon, Lionel; Salaun, Anne Claire

Publisher: IEEE

Year: 2014

Research on easement-based compensation mode of restricted land for grid construction

Type: Conference Paper

Author : Yan, Liang

Publisher: IEEE

Year: 2014

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Disturbance detection in the MV and the LV distribution networks using time-domain method

Thin-Film Bipolar Transistors on Recrystallized Polycrystalline Silicon Without Impurity Doped Junctions: Proposal and Investigation

Progress in Laser-Crystallized Thin-Film Polycrystalline Silicon Solar Cells: Intermediate Layers, Light Trapping, and Metallization

Accurate High Temperature Measurements Using Local Polysilicon Heater Structures

Development of Polycrystalline Silicon Based Photonic Crystal Membrane for Mid-Infrared Applications

Source-Gated Transistors for Power- and Area-Efficient AMOLED Pixel Circuits

Dependence of the Noise Behavior on the Drain Current for Thin Film Transistors

A Hybrid a-Si and Poly-Si TFTs Technology for AMOLED Pixel Circuits

Polycrystalline Silicon Nanowires Synthesis Compatible With CMOS Technology for Integrated Gas Sensing Applications

Research on easement-based compensation mode of restricted land for grid construction

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Disturbance detection in the MV and the LV distribution networks using time-domain method

Thin-Film Bipolar Transistors on Recrystallized Polycrystalline Silicon Without Impurity Doped Junctions: Proposal and Investigation

Progress in Laser-Crystallized Thin-Film Polycrystalline Silicon Solar Cells: Intermediate Layers, Light Trapping, and Metallization

Accurate High Temperature Measurements Using Local Polysilicon Heater Structures

Development of Polycrystalline Silicon Based Photonic Crystal Membrane for Mid-Infrared Applications

Source-Gated Transistors for Power- and Area-Efficient AMOLED Pixel Circuits

Dependence of the Noise Behavior on the Drain Current for Thin Film Transistors

A Hybrid a-Si and Poly-Si TFTs Technology for AMOLED Pixel Circuits

Polycrystalline Silicon Nanowires Synthesis Compatible With CMOS Technology for Integrated Gas Sensing Applications

Research on easement-based compensation mode of restricted land for grid construction