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RISEstimates for the overshoot of a random walk with negative drift and non convolution equivalent increments
Three-Valley Model For The Study Of Electron Transport Properties At Very High Electric Field In Bulk GaSb, Ga0.5Sb0.5As and GaAs Materials
considered have been taken into
account. For all materials, it is found that electron velocity
overshoot only occurs when the electric field is increased to a
value above a certain critical filed, unique to each material. This...
Study of High Field Electron Transport in AlN and AlGaN Semiconductors Using Monte Carlo Simulation
An ensemble Monte Carlo simulation is used
to compare high field electron transport in bulk AlN and
AlGaN. For all materials, we find that electron velocity
overshoot only occurs when the electric field in increased to...
Comparison of High Field Electron Transport in Wurtzite Phase of GaN and AlGaN
overshoot in two semiconductors....
Overshoot in biological systems modelled by Markov chains: a non-equilibrium dynamic phenomenon
Monte Carlo Modeling of Hot Electron Transport in Bulk AlAs, AlGaAs and GaAs at Room Temperature
The results of an ensemble Monte Carlo simulation of electron drif velocity response on the application field in bulk AlAs, AlGaAs AND GaAs are presented.
Comparison of Transient Ballistic Electron Transport in Bulk Wurtzite Phase 6H-SiC and GaN
An ensemble Monte Carlo simulation is used to compare bulk electron ballistic transport
in 6H-SiC and GaN materials. Electronic states within the conduction band valleys at
Transient and Steady-state Electron Transport Properties in Bulk Doped Ternary Nitride Materials Using an Ensemble Monte Carlo Method
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ellipsoidal shaps centered on important symmetry points of the Brillouin zone. For all materials, it is found that electron
velocity overshoot only occurs when the electric field is increased to a value above a certain critical field, unique to each
Calculated electron steady-state drift velocity in lattice matched Ga0.5In0.5P and Al0.26Ga0.26In0.48P using a threevalley Monte Carlo simulation
transport physics are examined. For two materials, it is found that electron velocity overshoot only
occurs when the electric field is increased to a value above a certain critical field, unique to each
material. This critical field is strongly...
Steady-state and Transient Electron Transport Within Bulk III-V Nitride Semiconductors Using an Updated Semiclassical Three-valley Monte Carlo Method
An ensemble Monte Carlo simulation is used to compare high field electron transport in
bulk InN, AlN and GaN. For all materials, we find that electron velocity overshoot only
occurs when the electric field in increased to a value above...