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Comparison of High and Low Field Electron Transport in Al0.2Ga0.8N, AlN and GaN
we present a comprehensive study of the transport dynamics of electrons in the binary and ternary compounds AlN, GaN and Al Ga N.
Comparison of electron-plasmon scattering effect on low-field electron mobility in ZnO and SiC
with deformation potential acoustic, piezoelectric, ionized impurity
and electron-plasmon scattering. Band non-parabolicity, admixture of p functions, arbitrary degeneracy
of the electron distribution, and the screening effects of free carriers...
Thermoelectric power and low-field electron mobility in AlxGa1−xN lattice-matched to GaN
phonons is considered jointly with deformation potential acoustic, piezoelectric, alloy and
ionized-impurity scattering. Band non-parabolicity, admixture of p functions, arbitrary degeneracy of the
electron distribution and the screening...
ELECTRON TRANSPORT CHARACTERISTICS OF 6H-SIC AND 4H-SIC FOR HIGH TEMPERATURE DEVICE MODELING
The Monte Carlo method is used to simulate electron transport in bulk würtzite phases of 6H-SiC and 4H-SiC using a three valley analytical band structure. Spherical, non-parabolic conduction band valleys at the , K and U symmetry points...