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RISComparison of low field electron transport characteristics in Ge and Si semiconductors and effects of neutron energy deposition on their crystal structure
concentration. The
amount of neutron energy deposition in Si and Ge crystal of different sizes and at different distances
from a neutron source has also been evaluated by using MCNP code. Then, the rate of atoms
displacement in the crystals...
Calculation of Low Field Electron Transport Characteristics in Ge and Effects of Fast Neutron Radiation on its Crystal Structure
mobilty increases significantly with increasing
doping concentration. The amount of neutron energy deposition in Ge crystal of different sizes and at
different distances from a neutron source has also been evaluated by using MCNP code. Then...
Theoretical Calculation of Atom Displacement Damage in Wurtzite GaN Crystal Structure by Fast Neutron Radiation
In this research, the amount of neutron energy
deposition in GaN crystal of different sizes and at different
distances from a neutron source has been evaluated by using
MCNP code. Then, the rate of atoms displacement in the...
Electron Mobility Calculation in GaAs and the Effects of Fast Neutron Radiation on its Crystal Structure
approximation using the phase-shift analysis. The amount of neutron energy deposition in GaAs crystal of different sizes and at different distances from a neutron source has also been evaluated by using MCNP code. Then, the rate of atoms displacement...