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Perpendicular STT_RAM cell in 8 nm technology node using Co1/Ni3(1 1 1)
Gr2
Year: 2018
Abstract:
product of a P-MTJ in order to avoid a high write voltage as technology is scaled down. A new graphene based STT-RAM cell for 8 nm technology node that uses high perpendicular magnetic anisotropy cobalt/
nickel (Co/Ni) multilayer as magnetic layers...
Natural nanomorphous Ni/NiO magnetic multilayers: Structure and magnetism of the high Ar pressure series
Publisher: American Scientific Publishers
Year: 2014
Drive analysis using lane semantics for data reduction in naturalistic driving studies
Publisher: IEEE
Year: 2014
Design of anisotropic zero-index metamaterial loaded tapered slot vivaldi antenna for microwave imaging
Publisher: IEEE
Year: 2014
Discriminative dictionary learning via mutual exclusion
Publisher: IEEE
Year: 2014
Swarm optimization techniques for multi-agent source localization
Publisher: IEEE
Year: 2014
Magnetic Anisotropy Evolution in CoFe/Au Barcode Nanowire Arrays
Publisher: IEEE
Year: 2014
Control of twin rotor MIMO system using PID controller with derivative filter coefficient
Publisher: IEEE
Year: 2014