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Characterization of Heavy-Ion-Induced Single-Event Effects in 65 nm Bulk CMOS ASIC Test Chips

Type: Journal Paper

Author : Chia-Hsiang Chen; Knag, Phil; Zhengya Zhang

Publisher: IEEE

Year: 2014

Investigation of Single Event Induced Soft Errors in Programmable Metallization Cell Memory

Type: Journal Paper

Author : Mahalanabis, Debayan; Barnaby, H.J.; Kozicki, M.N.; Bharadwaj, Vineeth; Rajabi, Saba

Publisher: IEEE

Year: 2014

Random-Walk Drift-Diffusion Charge-Collection Model For Reverse-Biased Junctions Embedded in Circuits

Type: Journal Paper

Author : Glorieux, M.; Autran, J.L.; Munteanu, Daniela; Clerc, Sylvain; Gasiot, Gilles; Roche, Philippe

Publisher: IEEE

Year: 2014

A CMOS Triple Inter-Locked Latch for SEU Insensitivity Design

Type: Journal Paper

Author : Tianwen Li; Haigang Yang; Gang Cai; Tian Zhi; Yue Li

Publisher: IEEE

Year: 2014

Upsets in Phase Change Memories Due to High-LET Heavy Ions Impinging at an Angle

Type: Journal Paper

Author : Gerardin, Simone; Bagatin, Marta; Paccagnella, Alessandro; Visconti, Angelo; Bonanomi, M.; Beltrami, S.; Ferlet-Cavrois, Veronique

Publisher: IEEE

Year: 2014

Author

Autran, J.L. (1)

Bagatin, Marta (1)

Barnaby, H.J. (1)

Beltrami, S. (1)

Bharadwaj, Vineeth (1)

Bonanomi, M. (1)

Chia-Hsiang Chen (1)

Clerc, Sylvain (1)

Ferlet-Cavrois, Veronique (1)

Gang Cai (1)

Publisher

IEEE (5)

Year

2014 (5)

Keywords

radiation hardening (electronics) (4)

linear energy transfer (3)

CMOS integrated circuits (2)

flip-flops (2)

Single event upsets (2)

single event upsets (2)

3D structure (1)

angular dependence (1)

Application specific integrated circuits (1)

application specific integrated circuits (1)

Type

Journal Paper (5)

Language (ISO)

English (5)

Content Type

Metadata Only (5)

Publication Title

Nuclear Science, IEEE Transactions on (5)

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