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    A Class-E Direct AC–AC Converter With Multicycle Modulation for Induction Heating Systems 

    Type: Journal Paper
    Author : Sarnago, Hector; Lucia, O.; Mediano, Arturo; Burdio, Jose M.
    Publisher: IEEE
    Year: 2014

    Effect of Neutron Irradiation on High Voltage <newline/>4H-SiC Vertical JFET Characteristics: <newline/>Characterization and Modeling 

    Type: Journal Paper
    Author : Popelka, S.; Hazdra, Pavel; Sharma, Ritu; Zahlava, V.; Vobecky, J.
    Publisher: IEEE
    Year: 2014

    Dual-Function Gate Driver for a Power Module With SiC Junction Field-Effect Transistors 

    Type: Journal Paper
    Author : Colmenares, Juan; Peftitsis, Dimosthenis; Rabkowski, Jacek; Sadik, Diane-Perle; Nee, H.-P.
    Publisher: IEEE
    Year: 2014

    An Experimental Investigation of the Tradeoff between Switching Losses and EMI Generation With Hard-Switched All-Si, Si-SiC, and All-SiC Device Combinations 

    Type: Journal Paper
    Author : Oswald, Niall; Anthony, Philip; McNeill, Neville; Stark, Bernard H.
    Publisher: IEEE
    Year: 2014

    Design and Implementation of Integrated Common Mode Capacitors for SiC-JFET Inverters 

    Type: Journal Paper
    Author : Robutel, Remi; Martin, Christian; Buttay, Cyril; Morel, Herve; Mattavelli, Paolo; Boroyevich, Dushan; Meuret, Regis
    Publisher: IEEE
    Year: 2014

    Characterization and Scalable Modeling of Power Semiconductors for Optimized Design of Traction Inverters with Si- and SiC-Devices 

    Type: Journal Paper
    Author : Merkert, Arvid; Krone, T.; Mertens, Axel
    Publisher: IEEE
    Year: 2014

    A 120 &#x00B0;C Ambient Temperature Forced Air-Cooled Normally-off SiC JFET Automotive Inverter System 

    Type: Journal Paper
    Author : Wrzecionko, Benjamin; Bortis, Dominik; Kolar, Johann Walter
    Publisher: IEEE
    Year: 2014

    Design Challenges in the Use of Silicon Carbide JFETs in Matrix Converter Applications 

    Type: Journal Paper
    Author : Empringham, Lee; De Lillo, Liliana; Schulz, Markus
    Publisher: IEEE
    Year: 2014

    600 V Diamond Junction Field-Effect Transistors Operated at 200<formula formulatype="inline"> <img src="/images/tex/16753.gif" alt="^{\\circ}{\\rm C}"> </formula> 

    Type: Journal Paper
    Author : Iwasaki, Takuya; Yaita, Junya; Kato, Haruhisa; Makino, Tatsuya; Ogura, M.; Takeuchi, D.; Okushi, H.; Yamasaki, Shintaro; Hatano, M.
    Publisher: IEEE
    Year: 2014

    700 V ultra-low on-resistance DB-nLDMOS with optimised thermal budget and neck region 

    Type: Journal Paper
    Author : Kun Mao; Ming Qiao; Zhaoji Li; Bo Zhang
    Publisher: IET
    Year: 2014
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