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RISDistributive radiation characterization based on the PEEC method
Publisher: IEEE
Year: 2014
Operational data classes for establishing situational awareness in cyberspace
Publisher: IEEE
Year: 2014
Defect-Centric Distribution of Channel Hot Carrier Degradation in Nano-MOSFETs
Publisher: IEEE
Year: 2014
Measurement-based models for crosstalk within a connector shell
Publisher: IEEE
Year: 2014
Quality Time: A simple online technique for quantifying multicore execution efficiency
Publisher: IEEE
Year: 2014
Reducing Short Channel Effects in Dual Gate SOI-MOSFETs with a Drain Dependent Gate Bias
Year: 2010
Abstract:
characteristics, a two–dimensional (2-D) analytical model for the surface potential variation along the channel is developed. A comparison between our structure and the single-gate (SG) SOI MOSFET demonstrates that short channel effects like, hot carriers effect...