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Investigation of Charge Relaxation in Silicon Nitride for the Reliability of Electrostatically Driven Capacitive MEMS Devices

Type: Journal Paper

Author : Gang Li; Wendong Zhang; Pengwei Li; Shengbo Sang; Jie Hu; Qinghua Zhao; Xuyuan Chen

Publisher: IEEE

Year: 2014

Advantages of GaN-Based Light-Emitting Diodes With Polarization-Reduced Chirped Multiquantum Barrier

Type: Journal Paper

Author : Yi An Yin; Naiyin Wang; Guanghan Fan; Shuti Li

Publisher: IEEE

Year: 2014

Study of InGaN/GaN Light Emitting Diodes With Step-Graded Electron Blocking Layer

Type: Journal Paper

Author : Chao Liu; Zhiwei Ren; Xin Chen; Bijun Zhao; Xingfu Wang; Yian Yin; Shuti Li

Publisher: IEEE

Year: 2014

AMO-FBMC based RoF transmission for efficient wired/wireless converged optical networks

Type: Conference Paper

Author : Jung, Sun-Young; Kang, Soo-Min; Jung, Sang-Min; Han, Sang-Kook

Publisher: IEEE

Year: 2014

MapReduce Algorithms for Processing Universal Quantifier Queries

Type: Conference Paper

Author : Habib, Wafaa M.A.; Mokhtar, Hoda M.O.; Sharkawi, Mohamed E.El

Publisher: IEEE

Year: 2014

Inverted Hybrid Inorganic–Organic Light-Emitting Diodes With Balanced Charge Injection

Type: Journal Paper

Author : Cao, X.A.; Acharya, Raj; Li, X.M.

Publisher: IEEE

Year: 2014

Carrier Transport Improvement in Blue InGaN Light-Emitting Diodes Via Reduced Polarization Using a Band-Engineered Electron Blocking Layer

Type: Journal Paper

Author : Pei Sun; Suihu Dang; Tianbao Li; Chunxia Li; Hua Zhang; Chengzhen Sun; Bingshe Xu

Publisher: IEEE

Year: 2014

Performance Enhancement of Blue InGaN Light-Emitting Diodes With a GaN–AlGaN–GaN Last Barrier and Without an AlGaN Electron Blocking Layer

Type: Journal Paper

Author : Liwen Cheng; Shudong Wu

Publisher: IEEE

Year: 2014

InAs-based heterostructure field-effect transistor using AlAs0.16Sb0.84 double barriers

Type: Journal Paper

Author : Yue-Min Lin; Kun-Ping Lin; Ting-Chi Lee; Meng-Ying Li; Chien-Ping Lee

Publisher: IET

Year: 2014

Enhanced electroluminescence of all-inorganic colloidal quantum dot light-emitting diode by optimising the MoO3 intermediate layer

Type: Journal Paper

Author : Liyuan Tang; Junliang Zhao; Xiaoli Zhang; Haitao Dai; Xiaowei Sun

Publisher: IET

Year: 2014

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Investigation of Charge Relaxation in Silicon Nitride for the Reliability of Electrostatically Driven Capacitive MEMS Devices

Advantages of GaN-Based Light-Emitting Diodes With Polarization-Reduced Chirped Multiquantum Barrier

Study of InGaN/GaN Light Emitting Diodes With Step-Graded Electron Blocking Layer

AMO-FBMC based RoF transmission for efficient wired/wireless converged optical networks

MapReduce Algorithms for Processing Universal Quantifier Queries

Inverted Hybrid Inorganic–Organic Light-Emitting Diodes With Balanced Charge Injection

Carrier Transport Improvement in Blue InGaN Light-Emitting Diodes Via Reduced Polarization Using a Band-Engineered Electron Blocking Layer

Performance Enhancement of Blue InGaN Light-Emitting Diodes With a GaN–AlGaN–GaN Last Barrier and Without an AlGaN Electron Blocking Layer

InAs-based heterostructure field-effect transistor using AlAs<sub>0.16</sub>Sb<sub>0.84</sub> double barriers

Enhanced electroluminescence of all-inorganic colloidal quantum dot light-emitting diode by optimising the MoO<sub>3</sub> intermediate layer

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Investigation of Charge Relaxation in Silicon Nitride for the Reliability of Electrostatically Driven Capacitive MEMS Devices

Advantages of GaN-Based Light-Emitting Diodes With Polarization-Reduced Chirped Multiquantum Barrier

Study of InGaN/GaN Light Emitting Diodes With Step-Graded Electron Blocking Layer

AMO-FBMC based RoF transmission for efficient wired/wireless converged optical networks

MapReduce Algorithms for Processing Universal Quantifier Queries

Inverted Hybrid Inorganic&#x2013;Organic Light-Emitting Diodes With Balanced Charge Injection

Carrier Transport Improvement in Blue InGaN Light-Emitting Diodes Via Reduced Polarization Using a Band-Engineered Electron Blocking Layer

Performance Enhancement of Blue InGaN Light-Emitting Diodes With a GaN&#x2013;AlGaN&#x2013;GaN Last Barrier and Without an AlGaN Electron Blocking Layer

InAs-based heterostructure field-effect transistor using AlAs<sub>0.16</sub>Sb<sub>0.84</sub> double barriers

Enhanced electroluminescence of all-inorganic colloidal quantum dot light-emitting diode by optimising the MoO<sub>3</sub> intermediate layer

Inverted Hybrid Inorganic–Organic Light-Emitting Diodes With Balanced Charge Injection

Performance Enhancement of Blue InGaN Light-Emitting Diodes With a GaN–AlGaN–GaN Last Barrier and Without an AlGaN Electron Blocking Layer