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Advantages of GaN-Based Light-Emitting Diodes With Polarization-Reduced Chirped Multiquantum Barrier

Type: Journal Paper

Author : Yi An Yin; Naiyin Wang; Guanghan Fan; Shuti Li

Publisher: IEEE

Year: 2014

High-Speed and High-Light Output Power of InGaAs/GaAs HBLETs With an InMoO<sub>x</sub> Contact

Type: Journal Paper

Author : Heng-Jui Chang; Tzu-Hsuan Huang; Chia-Lung Tsai; Chong-Long Ho; Meng-Chyi Wu

Publisher: IEEE

Year: 2014

Author

Chia-Lung Tsai (1)

Chong-Long Ho (1)

Guanghan Fan (1)

Heng-Jui Chang (1)

Meng-Chyi Wu (1)

Naiyin Wang (1)

Shuti Li (1)

Tzu-Hsuan Huang (1)

Yi An Yin (1)

Publisher

IEEE (2)

Year

2014 (2)

Keywords

III-V semiconductors (2)

/sub&gt (1)

Aluminum gallium nitride (1)

bandwidth 649 MHz (1)

carrier lifetime (1)

carrier recombination lifetime (1)

Charge carrier processes (1)

Chirp (1)

EBL (1)

efficiency droop (1)

Type

Journal Paper (2)

Language (ISO)

English (2)

Content Type

Metadata Only (2)

Publication Title

Electron Devices, IEEE Transactions on (1)

Photonics Technology Letters, IEEE (1)

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