are considered. The parameters include gate voltage dependency, short channel effects, and poly gate length dependency. The results presented here are not only very useful for accurate device modeling and characterization, but are also vital to better...

In this paper we propose a new dual gate SOI-MOSFET in order to reduce short-channel effects (SCEs). In the proposed structure, the bias of the second gate which is near the drain is dependent on the drain voltage. To ...

In this paper an extended drain-current conductance method is introduced, which can be used for extraction of separated drain and source resistors, forward and reversed modes carrier mobilities and effective channel length ...